Datasheet > CRXQF40M120G2Q

CRXQF40M120G2Q

更新时间： 2024-09-25 17:01:39

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	1273K
描述
TO-247-4L

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中文翻译

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数据手册

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CRXQF40M120G2Q 数据手册

CRXQF40M120G2Q

SiC MOSFET 1200V, 40mΩ, 66A

Features

Product Summary

• Qualified according to AEC Q101

• CRM G2 SIC MOSFET Technology

• High Blocking Voltage with Low On-Resistance

• High Speed Switching with Low Capacitances

• Avalanche Ruggedness

VDS

1200V

40mΩ

66A

R_{DS(on)_typ}

I_D

• Fast Reverse Recovery

Applications

• Solar Inverters

100% Avalanche Tested

• High Voltage DC/DC Converters

• On Board Charger(OBC)

• EV Charger

Package Marking and Ordering Information

Part #

Marking

Package

Packing

Tube

Reel Size

N/A

Tape Width

N/A

Qty

CRXQF40M120G2Q

TO-247-4L

25pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DSmax

Drain-source voltage

1200

Continuous drain current

V_GS=15V，T_C= 25°C

V_GS=15V，T_C= 100°C

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_D(pulse)

E_AS

132

940

Avalanche energy, single pulse (L=10mH, Rg=25Ω)

Gate-Source voltage (dynamic)^a1

Gate-Source voltage (static)^a2

V_GSmax

V_GSop

P_D

`-10/+22

`-5/+18

240

Power dissipation (T_C=25°C,T_J=175°C)

°C

T_j,T_stg

Operating Junction and Storage Temperature

`-55…175

a1: When using MOSFET Body Diode V_GSmax= -5V/+22V

a2: MOSFET can also safely operate at 0/+18 V

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