Datasheet > CRXU20D120G2

CRXU20D120G2

更新时间： 2024-04-09 19:03:01

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CRXU20D120G2 数据手册

CRXU20D120G2

Silicon Carbide Schottky Diode 1200 V, 20 A, 89 nC

General Description

Product Summary

V_RRM

I_F(T_C=159℃)

Q_C

This product family is CRM's second generation SiC JBS,

with lower VF and offers state of the art performance. It

is designed for high frequency applications where high

efficiency and high reliability are required. It is qualified

and manufactured on the productive 6 inch SiC line in

China fully owned by CR MICRO.

1200 V

20 A

89 nC

Features

• Low conduction loss due to low V_F

• Extremely low switching loss by tiny Q_C

• Highly rugged due to better surge current

• Industrial standard quality and reliability

Applications

• Solar inverter

• EV charge

• High performance SMPS

• Power factor correction

TO-247-2

Equivalent circuit

Package Marking and Ordering Information

Part #

Marking

Package

CRXU20D120G2

TO-247-2

Page 1

12 3 4 5 6 7

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