Datasheet > CRXSP80M120G1

CRXSP80M120G1

更新时间： 2024-04-09 19:01:14

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	1294K
描述
TO-263-7

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数据手册

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CRXSP80M120G1 数据手册

CRXSP80M120G1

SiC MOSFET 1200V, 80mΩ, 36A

Features

Product Summary

• High Blocking Voltage with Low On-Resistance

• High Speed Switching with Low Capacitances

• Easy to Parallel and Simple to Drive

• Avalanche Ruggedness

• Fast Reverse Recovery

• Halogen Free, RoHS Compliant

VDS

1200V

80mΩ

36A

R_{DS(on)_typ}

I_D

Applications

• Solar Inverters

100% Avalanche Tested

• Switch Mode Power Supplies

• High Voltage DC/DC Converters

• EV Charger

Package Marking and Ordering Information

Part #

Marking

Package

Packing

Reel

Reel Size

N/A

Tape Width

N/A

Qty

CRXSP80M120G1

TO-263-7

800pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DSmax

Drain-source voltage

1200

Continuous drain current

V_GS=20V，T_C= 25°C

V_GS=20V，T_C= 100°C

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_D(pulse)

E_AS

Avalanche energy, single pulse (L=10mH, Rg=25Ω)

Gate-Source voltage (dynamic)

Gate-Source voltage (static)

640

V_GSmax

V_GSop

P_D

`-10/+25

`-5/+20

152

Power dissipation (T_C=25°C,T_J=175°C)

Operating junction temperature

Storage temperature

°C

T_j

`-55…175

`-55…150

T _stg

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