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CRXQF1KM170G1 PDF预览

CRXQF1KM170G1

更新时间: 2024-11-18 15:19:31
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华润微 - CRMICRO /
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CRXQF1KM170G1 数据手册

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CRXQF1KM170G1  
SiC MOSFET 1700V, 0.6Ω, 5A  
Features  
Product Summary  
• High Blocking Voltage with Low On-Resistance  
• High Speed Switching with Low Capacitances  
• Easy to Parallel and Simple to Drive  
• Avalanche Ruggedness  
• Fast Reverse Recovery  
• Halogen Free, RoHS Compliant  
VDS  
1700V  
0.6Ω  
5A  
RDS(on)_typ  
ID  
Applications  
• Solar Inverters  
100% Avalanche Tested  
• Switch Mode Power Supplies  
• Auxiliary power supply for server  
Package Marking and Ordering Information  
Part #  
Marking  
-
Package  
Packing  
Tube  
Reel Size  
N/A  
Tape Width  
N/A  
Qty  
CRXQF1KM170G1  
TO-247-4L  
25pcs  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDSmax  
Drain-source voltage  
1700  
V
Continuous drain current  
VGS=20VTC = 25°C  
VGS=20VTC = 100°C  
ID  
A
5
3.3  
Pulsed drain current (TC = 25°C, tp limited by Tjmax  
)
ID(pulse)  
EAS  
12.5  
75  
A
mJ  
V
Avalanche energy, single pulse (L=10mH, Rg=25)  
Gate-Source voltage (dynamic)  
Gate-Source voltage (static)  
VGSmax  
VGSop  
PD  
`-10/+25  
`-5/+20  
55  
V
Power dissipation (TC=25°C,TJ=175°C)  
Operating junction temperature  
Storage temperature  
W
°C  
°C  
Tj  
`-55…175  
`-55…150  
T stg  
©China Resources Microelectronics Limited  
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