Datasheet > CRXQ40D120G3

CRXQ40D120G3

更新时间： 2024-11-18 18:09:55

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
7页	835K
描述
TO-247

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CRXQ40D120G3 数据手册

CRXQ40D120G3

Silicon Carbide Schottky Diode 1200 V, 40 A, 164 nC

General Description

Product Summary

V_RRM

I_F(T_C=149℃)

Q_C

This product family is CRM's third generation SiC JBS,

with lower VF and offers state of the art performance. It

is designed for high frequency applications where high

efficiency and high reliability are required. It is qualified

and manufactured on the productive 6 inch SiC line in

China fully owned by CR MICRO.

1200 V

40 A

164 nC

Features

• Low conduction loss due to low V_F

• Extremely low switching loss by tiny Q_C

• Highly rugged due to better surge current

• Industrial standard quality and reliability

Applications

• Solar inverter

• EV charge

• High performance SMPS

• Power factor correction

TO-247

Equivalent circuit

Package Marking and Ordering Information

Part #

Marking

Package

TO-247

CRXQ40D120G3

Page 1

12 3 4 5 6 7

中文翻译

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