Datasheet > CRTS026NE4N

CRTS026NE4N

更新时间： 2024-04-09 18:59:12

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	486K
描述
TO-263(或D2PAK)

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数据手册

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CRTS026NE4N 数据手册

CRTS026NE4N

Trench N-MOSFET 45V, 2mΩ, 120A

华润微电子(重庆)有限公司

Thermal Resistance

Parameter

Symbol

Max

0.45

Unit

R_thJC

Thermal resistance, junction – case.

°C/W

R_thJA

Thermal resistance, junction – ambient(min. footprint)

Electrical Characteristic (at Tj = 25 °C, unless otherwise specified)

Value

Symbol

Parameter

Unit

Test Condition

min.

typ.

max.

Static Characteristic

Drain-source breakdown

voltage

BV_DSS

V_GS=0V, I_D=250uA

V_DS=V_GS,I_D=250uA

V_{GS(th )}

Gate threshold voltage

2.5

3.5

V_DS=45V,V_GS=0V

T_j=25°C

Zero gate voltage drain

current

I_DSS

0.05

µA

T_j=150°C

200

Gate-source leakage

current

I_GSS

V_GS=±25V,V_DS=0V

±10

±100

V_GS=10V, I_D=60A,

T_j=25°C

Drain-source on-state

resistance

R_DS(on)

2.6

4.8

mΩ

T_j=150°C

g_fs

V_DS=5V,I_D=60A

Transconductance

173

Dynamic Characteristic

Input Capacitance

C_iss

6012

1398

V_GS=0V, V_DS=25V,

f=1MHz

C_oss

Output Capacitance

Reverse Transfer

Capacitance

C_rss

635

Q_G

Q_gs

Q_gd

t_d(on)

t_r

Gate Total Charge

Gate-Source charge

Gate-Drain charge

Turn-on delay time

Rise time

150

V_GS=10V, V_DS=25V,

I_D=60A, f=1MHz

120

V_GS=10V, V_DD=25V,

R_{G_ext}=3Ω,I_D=60A

Ω

t_d(off)

t_f

Turn-off delay time

Fall time

122

V_GS=0V, V_DS=0V,

f=1MHz

R_G

Gate resistance

1.1

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