Datasheet > CRRF10L100A

CRRF10L100A

更新时间： 2024-03-03 10:11:40

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
6页	828K
描述
TO-220F

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CRRF10L100A 数据手册

CRRF10L100A

100V Trench MOS Barrier Schottky VF 0.65V@5A, 25℃

Features

Product Summary

Symbol

I_F(AV)

Value

5A×2

100V

0.65V

150℃

• Trench MOS schottky technology

• Low stored charge Majority Carrier Conduction

• Ultra low forward voltage drop

• Low leakage current

V_RRM

V_{F(per diode)}

T_j(max

)

• Low power loss and high efficiency

• High surge capacity

• ESD rating:>20K volts

Applications

• Schottky rectifier design for high frequency switched mode power supplies, such as

adaptators and on board DC/DC converters.

TO-220F

10Amperes, 100 Volts

Top view

Bottom view

Package Marking and Ordering Information

Part #

Marking

Package

TO-220F

Reel Size

N/A

Tape Width

N/A

Qty

Packing

Tube

CRRF10L100A

50pcs

Major Rating and Characteristics(per diode

)

Parameter

Symbol

V_RRM

Value

100

Unit

Repetitive peak reverse voltage

T_J

Storage temperature range

-55 to 150

℃

Maximum average forward current 50 % duty

cycle, rectangular waveform

I_F(AV)

I_FSM

Tc=125℃

8.3 ms sine

Surge non repetitive forward current

100

Rev 2.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

12 3 4 5 6

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