Datasheet > CRRF20L100B

CRRF20L100B

更新时间： 2024-03-03 10:10:52

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
6页	720K
描述
TO-220F

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CRRF20L100B 数据手册

CRRF20L100B

100V Trench MOS Barrier Schottky VF 0.65V@10A, 25℃

Features

Product Summary

Symbol

I_F(AV)

Value

10A×2

100V

• Trench MOS schottky technology

• Low stored charge Majority Carrier Conduction

• Ultra low forward voltage drop

• Low leakage current

V_RRM

V_{F(per diode)}

T_j(max)

0.65V

150℃

• Low power loss and high efficiency

• High surge capacity

• ESD rating:>20K volts

Applications

• Schottky rectifier design for high frequency switched mode power supplies, such as

adaptators and on board DC/DC converters.

TO-220F

20Amperes, 100 Volts

Top view

Bottom view

Package Marking and Ordering Information

Part #

Marking

Package

TO-220F

Reel Size

N/A

Tape Width

N/A

Qty

Packing

Tube

CRRF20L100B

50pcs

Major Rating and Characteristics(per diode

)

Parameter

Symbol

V_RRM

Value

100

Unit

Repetitive peak reverse voltage

T_J

Storage temperature range

-55 to 150

℃

Maximum average forward current 50 %

I_F(AV)

I_FSM

Tc=125℃

duty cycle, rectangular waveform

Surge non repetitive forward current

8.3 ms sine

230

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

12 3 4 5 6

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