CRRT20L45A
45V Trench MOS Barrier Schottky VF 0.51V@10A, 25℃
Features
Product Summary
Symbol
IF(AV)
Value
10A×2
45V
• Trench MOS schottky technology
• Low stored charge Majority Carrier Conduction
• Ultra low forward voltage drop
• Low leakage current
VRRM
VF(per diode)
Tj(max)
0.51V
150℃
• Low power loss and high efficiency
• High surge capacity
• ESD rating(HBM):>6K volts
Applications
• Schottky rectifier design for high frequency switched mode power supplies, such as adaptators
and on board DC/DC converters.
A1
K
K
A2
A2
Package Marking and Ordering Information
Part #
Marking
-
Package
TO-220
Reel Size
N/A
Tape Width
N/A
Qty
Packing
CRRT20L45A
Tube
50pcs
Major Rating and Characteristics(per diode)
Parameter
Symbol
VRRM
Value
45
Unit
V
Repetitive peak reverse voltage
TJ
Storage temperature range
-55 to 150
℃
Maximum average forward current 50 % duty cycle,
rectangular waveform
IF(AV)
IFSM
Tc=125℃
10
A
Surge non repetitive forward current
8.3 ms sine
200
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
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