Datasheet > CRRT20L45A

CRRT20L45A

更新时间： 2024-11-21 17:02:03

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
5页	1076K
描述
TO-220

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中文翻译

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数据手册

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CRRT20L45A 数据手册

CRRT20L45A

45V Trench MOS Barrier Schottky VF 0.51V@10A, 25℃

Features

Product Summary

Symbol

I_F(AV)

Value

10A×2

45V

• Trench MOS schottky technology

• Low stored charge Majority Carrier Conduction

• Ultra low forward voltage drop

• Low leakage current

V_RRM

V_{F(per diode)}

T_j(max)

0.51V

150℃

• Low power loss and high efficiency

• High surge capacity

• ESD rating(HBM):>6K volts

Applications

• Schottky rectifier design for high frequency switched mode power supplies, such as adaptators

and on board DC/DC converters.

Package Marking and Ordering Information

Part #

Marking

Package

TO-220

Reel Size

N/A

Tape Width

N/A

Qty

Packing

CRRT20L45A

Tube

50pcs

Major Rating and Characteristics(per diode)

Parameter

Symbol

V_RRM

Value

Unit

Repetitive peak reverse voltage

T_J

Storage temperature range

-55 to 150

℃

Maximum average forward current 50 % duty cycle,

rectangular waveform

I_F(AV)

I_FSM

Tc=125℃

Surge non repetitive forward current

8.3 ms sine

200

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

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