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CRS01(TE85L,F)

更新时间： 2024-11-18 21:18:51
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
5页 181K
描述
Rectifier Diode

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中文翻译

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CRS01(TE85L,F) 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.7二极管类型：RECTIFIER DIODE
Base Number Matches：1

CRS01(TE85L,F) 数据手册

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CRS01  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CRS01  
High Speed Rectifier Applications  
Unit: mm  
•
•
•
•
Low forward voltage: V  
= 0.37 V @ I  
= 0.7 A  
FM  
FM  
Average forward current: I  
= 1.0 A  
F (AV)  
Repetitive peak reverse voltage: V  
= 30 V  
RRM  
Suitable for compact assembly due to small surface-mount package  
“S−FLATTM” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
30  
V
A
RRM  
I
1.0 (Note 1)  
20 (50 Hz)  
22 (60 Hz)  
−40~125  
−40~150  
F(AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
A
FSM  
Junction temperature  
Storage temperature  
T
j
°C  
°C  
T
stg  
JEDEC  
JEITA  
―
―
Note 1: Tℓ = 98°C: Rectangular waveform (α = 180°), V = 15 V  
R
TOSHIBA  
3-2A1A  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
Weight: 0.013 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 0.1 A  
= 0.7 A  
= 1.0 A  
0.25  
0.33  
0.36  
⎯
0.37  
⎯
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
Repetitive peak reverse current  
Junction capacitance  
I
V
= 30 V  
⎯
1.5  
mA  
pF  
RRM  
RRM  
= 10 V, f = 1.0 MHz  
R
C
V
40.0  
⎯
j
Device mounted on a ceramic board  
(soldering land: 2 mm × 2 mm)  
⎯
70  
Thermal resistance (junction to ambient)  
Thermal resistance (junction to lead)  
R
°C/W  
°C/W  
th (j-a)  
Device mounted on a glass-epoxy  
board  
(soldering land: 6 mm × 6 mm)  
⎯
⎯
140  
20  
R
⎯
th (j-ℓ)  
Start of commercial production  
1998-06  
1
2013-11-01  
12345

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