Datasheet > CRRI730L45X-S15

CRRI730L45X-S15

更新时间： 2024-03-03 10:08:49

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
6页	945K
描述
R-6T-S15

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CRRI730L45X-S15 数据手册

CRRI730L45X-S15

45V Trench MOS Barrier Schottky VF 0.49V@30A, 25℃

Features

Product Summary

Symbol

I_F(AV)

Value

30A

• Trench MOS schottky technology

• Low stored charge Majority Carrier Conduction

• Ultra low forward voltage drop

• Low leakage current

V_RRM

45V

V_{F(per diode)}

T_j(max)

0.49V

150℃

• Low power loss and high efficiency

• High surge capacity

• ESD rating:>20K volts

Applications

• Schottky rectifier design for high frequency switched mode power supplies, such as

adaptators and on board DC/DC converters.

Package Marking and Ordering Information

Part #

Marking

Package

R-6C

Reel Size

N/A

Tape Width

N/A

Qty

Packing

CRRI730L45X-S15

100ea

盒

Major Rating and Characteristics(per diode)

Parameter

Symbol

V_RRM

Value

Unit

Repetitive peak reverse voltage

T_J

Storage temperature range

-55 to 150

℃

Maximum average forward current 50 % duty

I_F(AV)

I_FSM

Tc=125℃

cycle, rectangular waveform

Surge non repetitive forward current

8.3 ms sine

832

Rev 2.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

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