CRNLT180C65H
650V GaN Power Transistor (FET) VGS8V@180mΩ,25°C
Features
Product summary
1.Easy to use, compatible with standard gate drivers
VDSS
RDS(ON),typ
QG,typ
650
180
14.7
52
V
2.Excellent QG x RDS(on) figure of merit (FOM)
3.Low QRR, no free-wheeling diode required
4.Low switching loss
mΩ
nC
nC
5.RoHS compliant and Halogen-free
QRR,typ
Applications
1.High efficiency power supplies
2.Telecom and datacom
3.Automotive
4.Servo motors
DFN 8×8
S
D
G
Packaging
Part Number
Package
Packaging
Tape and Reel
Base QTY
2500
CRNLT180C65
DFN8×8
Maximum ratings, at TC=25 °C, unless otherwise specified
Symbol
Parameter
Continuous drain current @TC=25°C
Continuous drain current @TC=100°C
Limit Value
Unit
A
A
14
9
ID
Pulsed drain current @TC=25°C (pulse width: 10us)
Pulsed drain current @TC=150°C (pulse width: 10us)
Drain to source voltage (TJ = -55°C to 150°C)
62
A
A
IDM
46
VDSS
VTDSS
VGSS
PD
650
800
V
Transient drain to source voltage a
Gate to source voltage
V
V
±20
67.5
W
°C
°C
°C
°C
Maximum power dissipation @TC=25°C
TC
Case
Operating temperature
-55 to 150
-55 to 150
-55 to 150
260
TJ
Junction
TS
Storage temperature
TCSOLD
Soldering peak temperature
@China Resources Microelectronics Limited
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