Datasheet > CRNLT300C65H

CRNLT300C65H

更新时间： 2024-06-27 12:12:58

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
11页	1463K
描述
DFN8×8

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中文翻译

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数据手册

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CRNLT300C65H 数据手册

CRNLT300C65H

650V GaN Power Transistor (FET) V_GS8V@240mΩ,25°C

Features

Product summary

1.Easy to use, compatible with standard gate drivers

V_DSS

R_DS(ON),typ

Q_G,typ

650

240

6.1

2.Excellent Q_Gx R_DS(on)figure of merit (FOM)

3.Low Q_RR, no free-wheeling diode required

4.Low switching loss

mΩ

5.RoHS compliant and Halogen-free

Q_RR,typ

22.4

Applications

1.High efficiency power supplies

2.High efficiency USB PD adapters 

3.Other consumer electronics

DFN 8×8

Packaging

Part Number

Package

Packaging

Tape and Reel

Base QTY

2500

CRNLT300C65

DFN8×8

Maximum ratings, at T_C=25 °C, unless otherwise specified

Symbol

Parameter

Continuous drain current @T_C=25°C

Continuous drain current @T_C=100°C

Limit Value

Unit

5.5

I_D

Pulsed drain current @T_C=25°C (pulse width: 10us)

Pulsed drain current @T_C=150°C (pulse width: 10us)

Drain to source voltage (T_J= -55°C to 150°C)

Transient drain to source voltage ^a

Gate to source voltage

I_DM

V_DSS

V_TDSS

V_GSS

P_D

650

800

±20

°C

Maximum power dissipation @TC=25°C

T_C

Case

Operating temperature

-55 to 150

260

T_J

Junction

T_S

Storage temperature

T_CSOLD

Soldering peak temperature

@China Resources Microelectronics Limited

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