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CRMR0410D PDF预览

CRMR0410D

更新时间: 2024-11-21 17:01:55
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
7页 894K
描述
SOP-8

CRMR0410D 数据手册

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CRMR0410D  
40V Dual Power MOSFET  
华润微电子(重庆)有限公司  
Features  
Product Summary  
Symbol  
VDS  
N-Ch1  
40V  
N-Ch2  
40V  
• Uses CRM(CQ) advanced Trench technology  
• Extremely low on-resistance RDS(on)  
• Excellent QgxRDS(on) product(FOM)  
RDS(on) typ.  
ID  
8mΩ  
12A  
8mΩ  
12A  
100% DVDS Tested  
Applications  
100% Avalanche Tested  
• Motor drive  
Package Marking and Ordering Information  
Part #  
Marking  
Package  
SOP-8  
Packing Reel Size  
Taping N/A  
Tape Width  
N/A  
Qty  
CRMR0410D  
CRMR0410D  
4000pcs  
Absolute Maximum Ratings  
Parameter  
Maximum  
Symbol  
Unit  
N-Ch1 N-Ch2  
VDS  
ID  
Drain-source voltage  
40  
18  
40  
18  
V
A
Continuous drain current TC = 25°C (Silicon limit)  
Continuous drain current TC = 25°C (Package limit)  
ID  
12  
12  
A
Pulsed drain current (TC = 25°C, tp limited by Tjmax  
)
ID pulse  
EAS  
48  
48  
A
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)  
Gate-Source voltage  
289  
±20  
5.0  
289  
±20  
5.0  
mJ  
V
VGS  
Power dissipation (TC = 25°C)  
Ptot  
W
°C  
Tj , T stg  
Operating junction and storage temperature  
-55...+150  
Rev1.1  
©China Resources Microelectronics (Chongqing) Limited  
Page 1  

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