Datasheet > CRMV0604D

CRMV0604D

更新时间： 2024-11-19 17:01:15

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
7页	985K
描述
TO-252-5

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中文翻译

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数据手册

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CRMV0604D 数据手册

CRMV0604D

60V Dual Power MOSFET

华润微电子(重庆)有限公司

Features

Product Summary

Symbol

V_DS

N-Ch1

60V

N-Ch2

60V

• Uses CRM(CQ) advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Dual N-ch and N-ch MOSFET

R_{DS(on) typ.}

I_D

12mΩ

16A

12mΩ

16A

Applications

100% DVDS Tested

• Battery protection switch

100% Avalanche Tested

Package Marking and Ordering Information

Part #

Marking

Package

Reel Size

Tape Width

N/A

Qty

Packing

Taping

CRMV0604D

TO-252-5

N/A

2500pcs

Absolute Maximum Ratings

Parameter

Maximum

Symbol

Unit

N-Ch1 N-Ch2

V_DS

I_D

Drain-source voltage

Continuous drain current T_C= 25°C (Silicon limit)

Continuous drain current T_C= 25°C (Package limit)

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)

Gate-Source voltage

148

±20

39.1

148

±20

39.1

V_GS

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Thermal Resistance

Parameter

Symbol

R_thJC

Typ

2.3

Max

3.2

Unit

°C/W

Thermal resistance, junction – case.

R_thJA

Thermal resistance, junction – ambient(min.footprint)

106.6

127.9

Rev1.1

©China Resources Microelectronics (Chongqing) Limited

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