Datasheet > CRMV0406D

CRMV0406D

更新时间： 2024-11-19 17:01:31

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
7页	972K
描述
TO-252-5

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中文翻译

获取价格

数据手册

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CRMV0406D 数据手册

CRMV0406D

40V Dual Power MOSFET

华润微电子(重庆)有限公司

Features

Product Summary

Symbol

V_DS

N-Ch1

40V

N-Ch2

40V

• Uses CRM(CQ) advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Dual N-ch and N-ch MOSFET

R_{DS(on) typ.}

I_D

7mΩ

28A

7mΩ

28A

100% DVDS Tested

Applications

• Battery protection switch

100% Avalanche Tested

Package Marking and Ordering Information

Part #

Marking

Package

Reel Size

Tape Width

N/A

Qty

Packing

Taping

CRMV0406D

TO-252-5

N/A

2500pcs

Absolute Maximum Ratings

Parameter

Maximum

Symbol

Unit

N-Ch1 N-Ch2

V_DS

I_D

Drain-source voltage

Continuous drain current T_C= 25°C (Silicon limit)

Continuous drain current T_C= 25°C (Package limit)

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

I_D

)

I_{D pulse}

E_AS

112

295

±20

53.9

112

295

±20

53.9

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)

Gate-Source voltage

V_GS

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Rev1.1

©China Resources Microelectronics (Chongqing) Limited

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