Datasheet > CRG15T120BNR3S

CRG15T120BNR3S

更新时间： 2024-09-18 15:18:43

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
8页	484K
描述
TO-3P(N)

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CRG15T120BNR3S 数据手册

Silicon FS Trench IGBT

CRG15T120BNR3S

General Description：

V_CES

1200

Using CRM's proprietary trench design, advanced FS(field stop)

technology and integrated with Free Wheeling Diode, the 1200V Trench FS

IGBT offers superior conduction and switching performances, high

avalanche ruggedness.

I_C

P_tot(T_C=25℃)

V_CE(SAT)

156

1.95

TO-3P（N）

Features：

 Trench FS Technology, Positive temperature coefficient

 Low saturation voltage: V_CE(sat), typ =1.95V

@ I_C=15A

 Extremely enhanced avalanche capability

Applications：

Power switch circuit of induction cooker(IH).

Ordering Information:

Part Number

Package

Marking

Delivery mode

CRG15T120BNR3S

TO-3P(N)

G15T120BNR3S

Tube

Absolute Maximum Ratings

（T_j= 25℃ unless otherwise specified）：

Parameter

Symbol

V_CES

Rating

Units

Collector-Emitter Voltage

1200

Gate- Emitter Voltage

V_GES

±20

Collector Current@T_C= 25 °C

Collector Current @T_C= 100 °C

Pulsed Collector Current@T_C= 25 °C

I_C

I_CM

Diode Continuous Forward Current @T_C= 100 °C

Diode Maximum Forward Current@T_C= 25 °C

Power Dissipation @ T_C= 25°C

I_F

I_FM

156

℃

P_D

Power Dissipation @T_C= 100 °C

Operating Junction and Storage Temperature Range

T_J，T_stg

150，-55 to +150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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