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CR03AM-8 PDF预览

CR03AM-8

更新时间: 2024-10-29 19:44:43
品牌 Logo 应用领域
瑞萨 - RENESAS 栅极
页数 文件大小 规格书
6页 92K
描述
SILICON CONTROLLED RECTIFIER,400V V(DRM),300MA I(T),TO-92

CR03AM-8 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.84Is Samacsys:N
最大直流栅极触发电流:0.1 mA最大直流栅极触发电压:0.8 V
最大维持电流:3 mA最大漏电流:0.1 mA
通态非重复峰值电流:20 A最大通态电压:1.8 V
最大通态电流:300 A最高工作温度:110 °C
最低工作温度:-40 °C断态重复峰值电压:400 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
触发设备类型:SCRBase Number Matches:1

CR03AM-8 数据手册

 浏览型号CR03AM-8的Datasheet PDF文件第2页浏览型号CR03AM-8的Datasheet PDF文件第3页浏览型号CR03AM-8的Datasheet PDF文件第4页浏览型号CR03AM-8的Datasheet PDF文件第5页浏览型号CR03AM-8的Datasheet PDF文件第6页 
To all our customers  
Regarding the change of names mentioned in the document, such as Mitsubishi  
Electric and Mitsubishi XX, to Renesas Technology Corp.  
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi  
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names  
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.  
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been  
made to the contents of the document, and these changes do not constitute any alteration to the  
contents of the document itself.  
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices  
and power devices.  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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CR03AM-8A RENESAS

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SILICON CONTROLLED RECTIFIER,400V V(DRM),300MA I(T),TO-92
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CR03AM-8AC MITSUBISHI

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CR03AM-8B RENESAS

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SILICON CONTROLLED RECTIFIER,400V V(DRM),300MA I(T),TO-92
CR03AM-8BC MITSUBISHI

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Silicon Controlled Rectifier, 1 Element, TO-92, TO-92, 3 PIN
CR03AM-8C RENESAS

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SILICON CONTROLLED RECTIFIER,400V V(DRM),300MA I(T),TO-92
CR03AMG-12-A-T92-K UTC

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Silicon Controlled Rectifier, 0.47A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-92, H
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Silicon Controlled Rectifier, 0.47A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-92, H
CR03AMG-12-T92-B UTC

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