生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.37 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 2.5 A |
最大漏极电流 (ID): | 2.5 A | 最大漏源导通电阻: | 0.31 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.6 W | 最大脉冲漏极电流 (IDM): | 10 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CPH6429 | ONSEMI |
获取价格 |
TRANSISTOR POWER, FET, FET General Purpose Power | |
CPH6434 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
CPH6438 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
CPH6442 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
CPH6442_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH6442-TL-E | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
CPH6442-TL-E | ONSEMI |
获取价格 |
单 N 沟道,功率 MOSFET,60V,6A,43mΩ | |
CPH6442-TL-W | ONSEMI |
获取价格 |
单 N 沟道,功率 MOSFET,60V,6A,43mΩ | |
CPH6443 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
CPH6443 | ONSEMI |
获取价格 |
TRANSISTOR 6 A, 35 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE, SC-95, SC-96, |