Datasheet > CPH6429

CPH6429

更新时间： 2024-11-09 20:48:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	94K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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中文翻译

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技术参数
数据手册

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CPH6429 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.37
Base Number Matches：	1

CPH6429 数据手册

Ordering number : ENN8081

CPH6429

N-Channel Silicon MOSFET

CPH6429

Ultrahigh-Speed Switching Applications

Features

• Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

±10

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (1200mm²✕0.8mm)

1.6

150

°C

Tch

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0

D GS

µA

(BR)DSS

=60V, V =0

±10

1.3

DSS

=±8V, V =0

GSS

(off)

=10V, I =1mA

0.4

1.8

Forward Transfer Admittance

yfs



=10V, I =1A

3.6

170

190

325



(on)1

=1A, V =4V

220

270

mΩ

Static Drain-to-Source On-State Resistance

(on)2

=1A, V =2.5V

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Ciss

=20V, f=1MHz

Coss

Crss

t (on)

See specified Test Circuit

Turn-OFF Delay Time

Fall Time

t (off)

Marking : ZF

Continued on next page.

Jan-2011, Rev. 0

Publication Order Number:

www.onsemi.com

Rev.0 I Page 1 of 4 I www.onsemi.com

CPH6429/D

12 3 4

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