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CPDER12V0U PDF预览

CPDER12V0U

更新时间: 2024-11-29 06:48:27
品牌 Logo 应用领域
上华 - COMCHIP 瞬态抑制器二极管
页数 文件大小 规格书
4页 190K
描述
SMD ESD Protection Diode

CPDER12V0U 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.7
Is Samacsys:N击穿电压标称值:15.5 V
最大钳位电压:24 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
极性:UNIDIRECTIONAL子类别:Transient Suppressors
表面贴装:YESBase Number Matches:1

CPDER12V0U 数据手册

 浏览型号CPDER12V0U的Datasheet PDF文件第2页浏览型号CPDER12V0U的Datasheet PDF文件第3页浏览型号CPDER12V0U的Datasheet PDF文件第4页 
SMD ESD Protection Diode  
SMD Diodes Specialist  
(RoHS Device)  
CPDER12V0U  
Features  
Uni-directional ESD protection  
IEC 61000-4-2 15kV(contact), 20kV(air).  
Working voltage:5V  
0503(1308)  
0.053(1.35)  
0.045(1.15)  
Ultra small SMD package:0503.  
High component density.  
0.034(0.85)  
0.026(0.65)  
Mechanical data  
Case:0503 (1308) Standard package ,  
molded plastic.  
0.030(0.75)  
0.024(0.60)  
Terminals: Gold plated, solderable per  
MIL-STD-750, method 2026.  
0.016(0.40) Typ.  
Marking Code: Cathode band & E05  
Mounting position: Any.  
0.022(0.55) Typ.  
Weight: 0.002 gram (approx.).  
Dimensions in inches and (millimeter)  
Maximum Rating AND Electrical Characteristics  
O
(at TA=25 C unless otherwise noted)  
Typ  
0.8  
Symbol Min  
Max Unit  
Parameter  
Conditions  
Forward voltage  
IF = 10mA  
IR = 1mA  
VR = 12V  
VF  
VBD  
IL  
V
Diode breakdown voltage  
Leakage current  
13.3  
15.5  
0.1  
17.5  
1.0  
60  
V
uA  
pF  
Junction capacitance  
VR = 0V,f = 1MHz  
CT  
IEC 61000-4-2(air)  
ESD capability  
30  
ESD  
VC  
kV  
IEC 61000-4-2(contact)  
IPP = 1A,TP=8/20us  
IPP = 5A,TP=8/20us  
19  
24  
Clamping voltage  
V
Peak pulse power  
PPP  
TJ  
120  
125  
150  
W
O
Operation temperature  
Storage temperature  
C
O
TSTG  
-55  
C
REV:A  
Page 1  
QW-A7022  
Comchip Technology CO., LTD.  

CPDER12V0U 替代型号

型号 品牌 替代类型 描述 数据表
CPDER12V0U-HF COMCHIP

完全替代

SMD ESD Protection Diode

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