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CPDER5V0H-HF PDF预览

CPDER5V0H-HF

更新时间: 2024-11-29 07:19:15
品牌 Logo 应用领域
上华 - COMCHIP 瞬态抑制器二极管
页数 文件大小 规格书
4页 102K
描述
SMD ESD Protection Diode

CPDER5V0H-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.79
击穿电压标称值:7 V最大钳位电压:20 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE极性:BIDIRECTIONAL
子类别:Transient Suppressors表面贴装:YES
Base Number Matches:1

CPDER5V0H-HF 数据手册

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SMD ESD Protection Diode  
CPDER5V0H-HF  
RoHS Device  
Halogen Free  
0503/SOD-723F  
Features  
0.053(1.35)  
0.045(1.15)  
-Bi-directional ESD protection  
-IEC 61000-4-5 (surge) ; IPP=7A  
-IEC 61000-4-2 (ESD) ; ±30KV(contact)  
-Low clamping voltage  
0.034(0.85)  
0.026(0.65)  
-Low leakage current  
0.030(0.75)  
0.024(0.60)  
Mechanical data  
-Case: 0503/SOD-723F Standard package ,  
molded plastic.  
0.016(0.40) Typ.  
-Terminals: Gold plated, solderable per  
MIL-STD-750, method 2026.  
0.022(0.55) Typ.  
-Marking Code: E05  
-Mounting position: Any.  
-Weight: 0.002 gram (approx.).  
Dimensions in inches and (millimeter)  
Maximum Rating and Electrical Characteristics  
O
(at TA=25 C unless otherwise noted)  
Typ  
Symbol Min  
Max Unit  
Parameter  
Conditions  
Diode breakdown voltage  
IR = 1mA  
VBD  
5.5  
7.0  
V
Leakage current  
VR = 5V  
IL  
uA  
pF  
1.0  
20  
Junction capacitance  
VR =0V,f =1MHz  
CT  
ESD  
ESD  
Vc  
30  
30  
11  
20  
kV  
kV  
V
IEC 61000-4-2(air)  
IEC 61000-4-2(contact)  
IPP = 1 A, tp=8/20us  
IPP = 7 A, tp=8/20us  
ESD capability  
Clamping Voltage  
Vc  
V
Peak Pulse Power  
TP=8/20us  
PPP  
Tj  
140  
125  
150  
W
°C  
°C  
Operation temperature  
Storage temperature  
TSTG  
-55  
REV: A  
Page 1  
QW-G7048  
Comchip Technology CO., LTD.  

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