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CPDERT5V0-HF PDF预览

CPDERT5V0-HF

更新时间: 2024-11-29 06:48:27
品牌 Logo 应用领域
上华 - COMCHIP 瞬态抑制器二极管
页数 文件大小 规格书
4页 185K
描述
SMD ESD Protection Diode

CPDERT5V0-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.66
Is Samacsys:N击穿电压标称值:7 V
最大钳位电压:15 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码:e4极性:BIDIRECTIONAL
子类别:Transient Suppressors表面贴装:YES
端子面层:Gold (Au)Base Number Matches:1

CPDERT5V0-HF 数据手册

 浏览型号CPDERT5V0-HF的Datasheet PDF文件第2页浏览型号CPDERT5V0-HF的Datasheet PDF文件第3页浏览型号CPDERT5V0-HF的Datasheet PDF文件第4页 
SMD ESD Protection Diode  
SMD Diodes Specialist  
(RoHS Device)  
CPDERT5V0-HF  
Features  
Halogen free.  
Bi-diretional ESD protection.  
(16kV) IEC 61000-4-2 rating.  
Surface mount package.  
Ultra small SMD package:0503.  
High component density.  
0503(1308)  
0.053(1.35)  
0.045(1.15)  
0.034(0.85)  
0.026(0.65)  
Mechanical data  
Case: 0503(1308) standard package,  
molded plastic.  
0.022(0.55)  
0.018(0.45)  
Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
0.016(0.40) Typ.  
Marking Code:  
CPDERT5V0-HF: E05  
Mounting position: Any.  
Weight: 0.0011 gram(approx.).  
0.022(0.55) Typ.  
Dimensions in inches and (millimeter)  
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Typ  
Symbol Min  
Max Unit  
Parameter  
Diode breakdown voltage  
Conditions  
IR = 1mA  
VBD  
5.1  
7.0  
V
Leakage current  
VR = 5V  
IL  
0.1  
2.0  
20  
uA  
pF  
Junction capacitance  
VR =0V,f =1MHz  
CT  
15  
IEC 61000-4-2(air)  
IEC 61000-4-2(contact)  
16  
8
ESD capability  
ESD  
kV  
Clamping voltage  
IPP = 5A,TP=8/20us  
TP=8/20us  
VC  
PPP  
Tj  
15  
75  
V
Peak pulse power  
W
O
Operation temperature  
Storage temperature  
125  
150  
C
O
TSTG  
-55  
C
REV:A  
Page 1  
QW-G7014  
Comchip Technology CO., LTD.  

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