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CPD83V-1N4148 PDF预览

CPD83V-1N4148

更新时间: 2024-02-15 01:57:05
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
5页 628K
描述
Rectifier Diode,

CPD83V-1N4148 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
二极管类型:RECTIFIER DIODEBase Number Matches:1

CPD83V-1N4148 数据手册

 浏览型号CPD83V-1N4148的Datasheet PDF文件第2页浏览型号CPD83V-1N4148的Datasheet PDF文件第3页浏览型号CPD83V-1N4148的Datasheet PDF文件第4页浏览型号CPD83V-1N4148的Datasheet PDF文件第5页 
CPD83V-1N4148  
High Speed Switching Diode Die  
0.15 Amp, 100 Volt  
www.centralsemi.com  
The CPD83V-1N4148 is a silicon high speed switching diode ideal for all types of commercial,  
industrial, entertainment, and computer applications.  
MECHANICAL SPECIFICATIONS:  
Die Size  
11 x 11 MILS  
7.1 MILS  
Die Thickness  
Anode Bonding Pad Size  
Top Side Metalization  
Back Side Metalization  
Scribe Alley Width  
Wafer Diameter  
3.35 x 3.35 MILS  
Al – 30,000Å  
Au-As – 9,000Å  
2.3 MILS  
ANODE  
5 INCHES  
Gross Die Per Wafer  
137,880  
BACKSIDE CATHODE  
R0  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
Peak Working Reverse Voltage  
Average Forward Current  
V
100  
75  
RRM  
V
V
mA  
mA  
A
RWM  
I
150  
O
Continuous Forward Current  
I
200  
F
Peak Forward Surge Current, tp=1.0μs  
Operating and Storage Junction Temperature  
I
2.0  
FSM  
T , T  
-65 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
SYMBOL TEST CONDITIONS  
A
MIN  
MAX  
UNITS  
I
V =20V  
25  
nA  
R
R
BV  
I =1.0mA  
100  
75  
V
V
R
R
R
BV  
I =100μA  
R
V
I =10mA  
1.0  
4.0  
4.0  
V
F
F
C
V =0, f=1.0MHz  
pF  
ns  
J
R
t
V =6.0V, I =10mA, I =1.0mA, R =100Ω  
rr  
R
F
rr  
L
R1 (16-September 2016)  

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