Datasheet > CPD83V-1N4448

CPD83V-1N4448

更新时间： 2024-11-20 14:56:03

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	549K
描述
150mA,100V Bare die,11.027 X 11.027 mils,Diode-Switching

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CPD83V-1N4448 数据手册

CPD83V-1N4448

High Speed Switching Diode Die

0.15 Amp, 100 Volt

www.centralsemi.com

The CPD83V-1N4448 is a silicon high speed switching diode ideal for all types of commercial,

industrial, entertainment, and computer applications.

MECHANICAL SPECIFICATIONS:

Die Size

11 x 11 MILS

7.1 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.35 x 3.35 MILS

Al – 30,000Å

Au-As – 9,000Å

2.3 MILS

ANODE

5 INCHES

Gross Die Per Wafer

137,880

BACKSIDE CATHODE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

Peak Working Reverse Voltage

Average Forward Current

100

RRM

RWM

150

Continuous Forward Current

200

Peak Forward Surge Current, tp=1.0μs

Operating and Storage Junction Temperature

2.0

FSM

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL TEST CONDITIONS

MIN

MAX

UNITS

V =20V

I =100μA

100

I =5.0μA

I =5.0mA

0.62

0.72

1.0

4.0

I =100mA

V =0, f=1.0MHz

V =6.0V, I =10mA, I =1.0mA, R =100Ω

R0 (16-September 2016)

12 3 4 5

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