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CPD83V-1N4454 PDF预览

CPD83V-1N4454

更新时间: 2024-11-20 14:52:27
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
5页 549K
描述
150mA,75V Bare die,11.027 X 11.027 mils,Diode-Switching

CPD83V-1N4454 数据手册

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CPD83V-1N4454  
High Speed Switching Diode Die  
0.15 Amp, 75 Volt  
www.centralsemi.com  
The CPD83V-1N4454 is a silicon high speed switching diode ideal for all types of commercial,  
industrial, entertainment, and computer applications.  
MECHANICAL SPECIFICATIONS:  
Die Size  
11 x 11 MILS  
7.1 MILS  
Die Thickness  
Anode Bonding Pad Size  
Top Side Metalization  
Back Side Metalization  
Scribe Alley Width  
Wafer Diameter  
3.35 x 3.35 MILS  
Al – 30,000Å  
Au-As – 9,000Å  
2.3 MILS  
ANODE  
5 INCHES  
Gross Die Per Wafer  
137,880  
BACKSIDE CATHODE  
R0  
MAXIMUM RATINGS: (T =25°C)  
Peak Repetitive Reverse Voltage  
SYMBOL  
UNITS  
V
A
V
75  
150  
RRM  
Average Forward Current  
I
mA  
mA  
A
O
Continuous Forward Current  
I
200  
F
Peak Forward Surge Current, tp=1.0μs  
Operating and Storage Junction Temperature  
I
4.0  
FSM  
T , T  
-65 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
SYMBOL TEST CONDITIONS  
A
MIN  
MAX  
UNITS  
I
V =50V  
100  
nA  
R
R
BV  
I =5.0μA  
75  
V
V
R
R
V
I =10mA  
1.0  
2.0  
2.0  
4.0  
F
F
C
V =0, f=1.0MHz  
pF  
ns  
ns  
J
R
t
t
V =6.0V, I =10mA, I =1.0mA, R =100Ω  
rr  
rr  
R
F
rr  
L
I =I =10mA, I =1.0mA  
F
R
rr  
R0 (16-September 2016)  

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