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CP188-2N2484-CG PDF预览

CP188-2N2484-CG

更新时间: 2024-02-22 22:05:01
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 206K
描述
Transistor

CP188-2N2484-CG 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
Base Number Matches:1

CP188-2N2484-CG 数据手册

 浏览型号CP188-2N2484-CG的Datasheet PDF文件第2页 
TM  
PROCESS CP188  
Central  
Small Signal Transistor  
Semiconductor Corp.  
NPN - Low Noise Amplifier Transistor Chip  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
Die Size  
Die Thickness  
15 x 15 MILS  
9.0 MILS  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
4.0 x 4.0 MILS  
5.5 x 5.5 MILS  
Al - 30,000Å  
Au - 18,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
53,730  
PRINCIPAL DEVICE TYPES  
CMPT2484  
CMPT5088  
CMPT5089  
CMPT6428  
CMPT6429  
2N2484  
BACKSIDE COLLECTOR  
145 Adams Avenue  
Hauppauge, NY 11788 USA  
Tel: (631) 435-1110  
Fax: (631) 435-1824  
R2 (1 -August 2002)  
www.centralsemi.com  

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