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CNZ2179R PDF预览

CNZ2179R

更新时间: 2024-11-05 13:07:03
品牌 Logo 应用领域
松下 - PANASONIC 光电传感器
页数 文件大小 规格书
2页 48K
描述
Diffuse Photoelectric Sensor, 5mm Min, 5mm Max, 0.50-1.50mA, Rectangular, Through Hole Mount, PRSTR104-004, 4 PIN

CNZ2179R 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.84其他特性:HIGH SENSITIVITY, 0.50V VCE
主体宽度:5.2 mm主体高度:8 mm
主体长度或直径:13 mm最大测量范围(毫米):5 mm
最小测量范围(毫米):5 mm安装特点:THROUGH HOLE MOUNT
最大工作电流:50 mA输出范围:0.50-1.50mA
输出类型:ANALOG CURRENT封装形状/形式:RECTANGULAR
响应时间:20 µs传感器/换能器类型:LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE
最大供电电压:1.5 V最小供电电压:1.3 V
表面贴装:NO端接类型:SOLDER
Base Number Matches:1

CNZ2179R 数据手册

 浏览型号CNZ2179R的Datasheet PDF文件第2页 
Reflective Photosensors (Photo Reflectors)  
CNZ2179  
Reflective Photosensor  
Unit : mm  
Overview  
CNZ2179 is a reflective photosensor with a long focal distance,  
in which a high efficiency GaAs infrared light emitting diode is used  
as a light emitting element and a high sensitivity Si phototransistor  
is used as the light detecting element.  
13.0  
Features  
Long focal distance : 6 mm (typ.)  
0.85max.  
(2-0.5)  
(2-0.5)  
(2.54)  
Visible light cutoff resin is used  
(7.6)  
1
2
4
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol Ratings Unit  
3
Reverse voltage (DC)  
Forward current (DC)  
Power dissipation  
Collector current  
VR  
3
50  
75  
20  
20  
5
V
mA  
mW  
mA  
V
Input (Light  
1
2
3
4
IF  
emitting diode)  
Pin connection  
*1  
(Note)  
PD  
IC  
1. Tolerance unless otherwise specified is ±0.3  
2. ( ) Dimension is reference  
Collector to emitter voltage VCEO  
Output (Photo  
transistor)  
Emitter to collector voltage VECO  
V
*2  
Collector power dissipation PC  
100  
mW  
˚C  
Operating ambient temperature  
Topr –25 to +80  
Temperature  
Storage temperature  
Tstg –30 to +85  
˚C  
*1 Input power derating ratio is 1.25 mW/˚C at Ta 25˚C.  
*2 Output power derating ratio is 1.67 mW/˚C at Ta 25˚C.  
Electrical Characteristics (Ta = 25˚C)  
Parameter  
Symbol  
VF  
Conditions  
min  
typ  
max  
1.5  
Unit  
V
Forward voltage (DC)  
Reverse current (DC)  
IF = 50mA  
VR = 3V  
1.3  
Input  
characteristics  
IR  
10  
µA  
µA  
µA  
µs  
Output characteristics Collector cutoff current  
ICEO VCE = 10V  
0.2  
*1  
Collector current  
IC  
VCC = 5V, IF = 20mA, RL = 100Ω  
180  
1500  
Transfer  
Response time  
tr*2 , tf*3 VCC = 10V, IC = 0.1mA, RL = 100  
20  
characteristics  
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA  
0.5  
V
*1  
Transfer characteristics measurement circuit  
(Ambient light is shut off completely.)  
*2  
*3  
Time required for the collector current to increase from  
10% to 90% of its final value.  
Time required for the collector current to decrease from  
90% to 10% of its initial value.  
VCC  
IF  
IC  
90%  
10%  
d = 5 mm  
RL  
Standard white paper  
(Reflective ratio 90%)  
tr  
tf  
1

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