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CNZ2253R PDF预览

CNZ2253R

更新时间: 2024-11-09 13:07:03
品牌 Logo 应用领域
松下 - PANASONIC 光电传感器
页数 文件大小 规格书
3页 318K
描述
Diffuse Photoelectric Sensor, 3mm Min, 3mm Max, 6-18mA, 1-Channel, Rectangular, Through Hole Mount, PRSTR104-002, 4 PIN

CNZ2253R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84其他特性:HIGH SENSITIVITY, 1.50V VCE
主体宽度:4 mm主体高度:6 mm
主体长度或直径:10.6 mm间隙大小:3.2 mm
最大测量范围(毫米):3 mm最小测量范围(毫米):3 mm
安装特点:THROUGH HOLE MOUNT信道数量:1
最大工作电流:50 mA最高工作温度:85 °C
最低工作温度:-25 °C输出电路类型:Darlington
最大输出电流:18 mA输出范围:6-18mA
输出类型:ANALOG CURRENT最大输出电压:20 V
封装形状/形式:RECTANGULAR响应时间:150 µs
传感器/换能器类型:LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE子类别:Position, Linear, Photoelectric Sensors
最大供电电压:1.5 V最小供电电压:1.2 V
表面贴装:NO端接类型:SOLDER
VCEsat-Max:1.5 VBase Number Matches:1

CNZ2253R 数据手册

 浏览型号CNZ2253R的Datasheet PDF文件第2页浏览型号CNZ2253R的Datasheet PDF文件第3页 
Reflective Photosensors (Photo Reflectors)  
CNZ2253 (ON2253)  
Reflective Photosensor  
Unit : mm  
Mark for indicating  
LED side  
Overview  
7.5±0.2  
(3.2)  
CNZ2253 is a photosensor detecting the change of reflective light  
in which a high efficiency GaAs infrared light emitting diode is used  
as the light emitting element, and a high sensitivity Si Darlington  
phototransistor is used as the light detecting element. The two  
elements are located parallel in the same direction and objects are  
detected when passing in front of the device.  
10.6±0.3  
9.6±0.3  
ø2.2±0.2  
Features  
High sensitivity  
Small size and light weight  
ø0.45±0.05  
Applications  
(7.2)  
ø0.3±0.05  
Detection of paper, film and cloth  
Optical mark reading  
*2-0.9±0.15  
2
3
Detection of position and edge  
Detection of coin and bill  
Start, end mark detection of magnetic tape  
1
4
Absolute Maximum Ratings (Ta = 25˚C)  
(Note)  
1
2
3
4
1. ( ) Dimension is reference  
Pin connection  
Parameter  
Symbol Ratings Unit  
2. * is dimension at the root of leads  
Reverse voltage (DC)  
Forward current (DC)  
Power dissipation  
VR  
IF  
3
50  
75  
20  
5
V
mA  
mW  
V
Input (Light  
emitting diode)  
*1  
PD  
Collector to emitter voltage VCEO  
Emitter to collector voltage VECO  
V
Output (Photo  
transistor)  
Collector current  
IC  
*2  
30  
100  
mA  
mW  
˚C  
*1 Input power derating ratio is  
Collector power dissipation PC  
1.0 mW/˚C at Ta 25˚C.  
*2 Output power derating ratio is  
Operating ambient temperature  
Topr –25 to +85  
Temperature  
1.34 mW/˚C at Ta 25˚C.  
Storage temperature  
Tstg –30 to +100 ˚C  
Electrical Characteristics (Ta = 25˚C)  
Parameter  
Symbol  
VF  
Conditions  
min  
typ  
max  
1.5  
Unit  
Forward voltage (DC)  
Reverse current (DC)  
Capacitance between terminals  
IF = 50mA  
VR = 3V  
1.2  
V
µA  
pF  
µA  
mA  
µs  
Input  
IR  
10  
characteristics  
Ct  
VR = 0V, f = 1MHz  
50  
Output characteristics Collector cutoff current  
ICEO VCE = 10V  
0.5  
30  
*1*2  
Collector current  
IC  
VCC = 5V, IF = 10mA, RL = 100Ω  
3
Transfer  
Response time  
tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100Ω  
150  
characteristics  
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 1mA  
1.5  
V
*1 IC classifications  
*2  
Transfer characteristics measurement circuit  
(Ambient light is shut off completely)  
Class  
Q
R
S
IC (mA)  
3 to 9  
6 to 18  
12 to 30  
VCC  
IF  
IC  
*3  
Time required for the collector current to increase  
from 10% to 90% of its final value.  
d = 3 mm  
*4  
Time required for the collector current to decrease  
from 90% to 10% of its initial value.  
RL  
Standard white paper  
(Reflective ratio 90%)  
90%  
10%  
tr  
tf  
Note) The part number in the parenthesis shows conventional part number.  
1

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