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CN8050D PDF预览

CN8050D

更新时间: 2024-11-06 23:42:55
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CN8050D 数据手册

 浏览型号CN8050D的Datasheet PDF文件第2页浏览型号CN8050D的Datasheet PDF文件第3页 
IS/ISO 9002  
Lic# QSC/L- 000019.3  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
SILICON PLANAR EPITAXIAL TRANSISTORS  
CN8050 NPN  
CN8550 PNP  
TO-92  
Plastic Package  
C
B
E
ABSOLUTE MAXIMUM RATINGS  
VALUE  
25  
DESCRIPTION  
SYMBOL  
UNITS  
VCEO  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Collector Current  
V
V
VCBO  
VEBO  
IC  
40  
6.0  
V
800  
1.0  
mA  
A
ICM  
IB  
Peak Collector Current  
Base Current  
100  
625  
150  
mA  
mW  
ºC  
ºC  
Power Dissipation@ Ta=25ºC  
*Ptot  
Tj  
Junction Temperature  
Tstg  
- 55 to +150  
Storage Temperature Range  
THERMAL RESISTANCE  
*Rth (j-a)  
200  
Junction to Ambient in free air  
K/W  
* Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.  
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL  
TEST CONDITION  
MIN  
25  
40  
6
TYP  
MAX  
UNITS  
VCEO  
IC=2mA, IB=0  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
DC Current Gain  
V
V
V
VCBO  
VEBO  
hFE  
IC=10mA, IE=0  
IE=100mA, IC=0  
VCE=1V, IC=5mA  
VCE=1V, IC=100mA  
45  
120  
120  
160  
300  
200  
300  
CN8050C/CN8550C  
CN8050D/CN8550D  
VCE=1V, IC=350mA  
VCB=35V, IE = 0  
60  
ICBO  
Collector Cut off Current  
100  
100  
0.5  
1.2  
nA  
nA  
V
IEBO  
VBE=3V, IC = 0  
Emitter Cut off Current  
VCE(sat)  
VBE(sat)  
IC=500mA, IB=50mA  
IC=500mA, IB=50mA  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
V
IC=10mA, VCE=5V,  
f=50MHz  
fT  
Gain Bandwidth Product  
100  
MHz  
Ccbo  
VCB=10V, f=1MHz  
PNP  
Collector Base Capacitance  
35  
20  
pF  
pF  
NPN  
Data Sheet  
Page 1 of 3  
Continental Device India Limited  

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