Datasheet > CMT2N7002

CMT2N7002

更新时间： 2024-11-24 06:48:15

品牌	Logo	应用领域
虹冠电子 - CHAMP		/
页数	文件大小	规格书
6页	208K
描述
SMALL SIGNAL MOSFET

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中文翻译

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技术参数
数据手册

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CMT2N7002 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	配置：	Single
最大漏极电流 (Abs) (ID)：	0.115 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.225 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

CMT2N7002 数据手册

CMT2N7002

S^MALLSIGNAL MOSFET

GENERAL DESCRIPTION

FEATURES

This N-Channel enhancement mode field effect transistor is

produced using high cell density, DMOS technology. These

products have been designed to minimize on-state resistance

while provide rugged, reliable, and fast switching performance.

It can be used in most applications requiring up to 115mA DC

and can deliver pulsed currents up to 800mA. This product is

particularly suited for low voltage, low current applications such

as small servo motor control, power MOSFET gate drivers, and

other switching applications.

High Density Cell Design for Low R_DS(ON)

Voltage Controlled Small Signal Switch

Rugged and Reliable

High Saturation Current Capability

PIN CONFIGURATION

SYMBOL

SOT-23, SOT-323

Top View

SOT-363

Top View

N-Channel MOSFET

ORDERING INFORMATION

Part Number

Package

SOT-23

SOT-323

SOT-363

SOT-23

SOT-323

SOT-363

CMT2N7002

CMT2N7002G*

CMT2N7002WG*

CMT2N7002DWG*

CMT2N7002X*

CMT2N7002WX*

CMT2N7002DWX*

*Note: G : Suffix for Pb Free Product W: Suffix for Package SOT-323 X : Suffix for Halogen Free Product

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

V_DSS

V_DGR

I_D

Value

Unit

Drain Source Voltage

Drain-Gate Voltage (R_GS= 1.0MΩ)

Drain to Current － Continuous

－ Pulsed

115

800

±20

±40

225

1.8

I_DM

Gate-to-Source Voltage － Continue

V_GS

－ Non-repetitive

V_GSM

P_D

Total Power Dissipation

mW/℃

Derate above 25℃

Single Pulse Drain-to-Source Avalanche Energy － T_J= 25℃

(V_DD= 50V, V_GS= 10V, I_AS= 0.8A, L = 30mH, R_G= 25Ω)

Operating and Storage Temperature Range

E_AS

9.6

T_J, T_STG

θ_JA

-55 to 150

417

℃

℃/W

℃

Thermal Resistance － Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

T_L

300

2009/07/17 Rev. 1.8

Champion Microelectronic Corporation

Page 1

12 3 4 5 6

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