Datasheet > CMT2N7002KX

CMT2N7002KX

更新时间： 2024-11-09 06:48:15

品牌	Logo	应用领域
虹冠电子 - CHAMP		/
页数	文件大小	规格书
5页	172K
描述
SMALL SIGNAL MOSFET

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中文翻译

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技术参数
数据手册

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CMT2N7002KX 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

CMT2N7002KX 数据手册

CMT2N7002K

S^MALLSIGNAL MOSFET

GENERAL DESCRIPTION

FEATURES

This N-Channel enhancement mode field effect transistor is

produced using high cell density, DMOS technology. These

products have been designed to minimize on-state resistance

while provide rugged, reliable, and fast switching and ESD

enhanced performance. It can be used in most applications

requiring up to 115mA DC and can deliver pulsed currents up

to 800mA. This product is particularly suited for low voltage, low

current applications such as small servo motor control, power

MOSFET gate drivers, and other switching applications.

High Density Cell Design for Low R_DS(ON)

Voltage Controlled Small Signal Switch

Rugged and Reliable

High Saturation Current Capability

ESD Protected 2KV HBM

PIN CONFIGURATION

SYMBOL

SOT-23

TOP View

N-Channel MOSFET

ORDERING INFORMATION

Part Number

CMT2N7002K

Package

SOT-23

CMT2N7002KX*

*Note: X : Suffix for Halogen Free Product

ABSOLUTE MAXIMUM RATINGS

Rating

Drain Source Voltage

Symbol

Value

Unit

V_DSS

V_DGR

I_D

Drain-Gate Voltage (R_GS= 1.0MΩ)

Drain to Current － Continuous

－ Pulsed

115

I_DM

800

Gate-to-Source Voltage － Continue

－ Non-repetitive

V_GS

V_GSM

P_D

±15

Total Power Dissipation

225

mW/℃

℃

Derate above 25℃

1.8

Operating and Storage Temperature Range

Thermal Resistance － Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

T_J, T_STG

θ_JA

-55 to 150

417

℃/W

℃

T_L

300

2009/07/17 Rev. 1.1

Champion Microelectronic Corporation

Page 1

12 3 4 5

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