Datasheet > CMT2N7002AG

CMT2N7002AG

更新时间： 2024-02-20 11:55:45

品牌	Logo	应用领域
虹冠电子 - CHAMP		/
页数	文件大小	规格书
5页	202K
描述
SMALL SIGNAL MOSFET

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中文翻译

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技术参数
数据手册

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CMT2N7002AG 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

CMT2N7002AG 数据手册

CMT2N7002AG

S^MALLSIGNAL MOSFET

GENERAL DESCRIPTION

FEATURES

This N-Channel enhancement mode field effect transistor ꢀ

is produced using high cell density, DMOS technology. ꢀ

These products have been designed to minimize ꢀ

on-state resistance while provide rugged, reliable, and ꢀ

fast switching performance. It can be used in most ꢀ

applications requiring up to 115mA DC and can deliver

pulsed currents up to 800mA. This product is particularly

suited for low voltage, low current applications such as

small servo motor control, power MOSFET gate drivers,

and other switching applications.

High Density Cell Design for Low R_DS(ON)

Voltage Controlled Small Signal Switch

Rugged and Reliable

High Saturation Current Capability

Built-in G-S Protection Diode

PIN CONFIGURATION

SYMBOL

SOT-23

Top View

N-Channel MOSFET

ORDERING INFORMATION

Part Number

CMT2N7002AG

Package

SOT-23

*Note: G : Suffix for Pb Free Product

2007/07/18 Rev. 1.0

Champion Microelectronic Corporation

Page 1

12 3 4 5

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