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CMT2N7002AG PDF预览

CMT2N7002AG

更新时间: 2024-11-24 06:48:15
品牌 Logo 应用领域
虹冠电子 - CHAMP /
页数 文件大小 规格书
5页 202K
描述
SMALL SIGNAL MOSFET

CMT2N7002AG 数据手册

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CMT2N7002AG  
SMALL SIGNAL MOSFET  
GENERAL DESCRIPTION  
FEATURES  
This N-Channel enhancement mode field effect transistor ꢀ  
is produced using high cell density, DMOS technology. ꢀ  
These products have been designed to minimize ꢀ  
on-state resistance while provide rugged, reliable, and ꢀ  
fast switching performance. It can be used in most ꢀ  
applications requiring up to 115mA DC and can deliver  
pulsed currents up to 800mA. This product is particularly  
suited for low voltage, low current applications such as  
small servo motor control, power MOSFET gate drivers,  
and other switching applications.  
High Density Cell Design for Low RDS(ON)  
Voltage Controlled Small Signal Switch  
Rugged and Reliable  
High Saturation Current Capability  
Built-in G-S Protection Diode  
PIN CONFIGURATION  
SYMBOL  
SOT-23  
Top View  
3
2
1
N-Channel MOSFET  
ORDERING INFORMATION  
Part Number  
CMT2N7002AG  
Package  
SOT-23  
*Note: G : Suffix for Pb Free Product  
2007/07/18 Rev. 1.0  
Champion Microelectronic Corporation  
Page 1  

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