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CMSD2005S PDF预览

CMSD2005S

更新时间: 2024-11-07 03:26:07
品牌 Logo 应用领域
CENTRAL 二极管开关高压
页数 文件大小 规格书
2页 115K
描述
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES

CMSD2005S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.53配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.225 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.275 W
认证状态:Not Qualified最大重复峰值反向电压:350 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED

CMSD2005S 数据手册

 浏览型号CMSD2005S的Datasheet PDF文件第2页 
TM  
CMSD2005S  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
DUAL, IN SERIES  
DESCRIPTION:  
HIGH VOLTAGE  
The CENTRAL SEMICONDUCTOR  
SILICON SWITCHING DIODES  
CMSD2005S contains two (2) High Voltage  
Silicon Switching Diodes, manufactured by the  
epitaxial planar process, epoxy molded in a  
SOT-323 surface mount package, designed for  
applications requiring high voltage capability.  
MARKING CODE: B5D  
SOT-323 CASE  
MAXIMUM RATINGS (T =25°C)  
A
SYMBOL  
UNITS  
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Peak Repetitive Reverse Current  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp= 1µs  
Forward Surge Current, tp= 1s  
Power Dissipation  
V
300  
350  
200  
225  
625  
4.0  
V
V
R
V
RRM  
I
mA  
mA  
mA  
A
O
I
F
I
FRM  
I
FSM  
FSM  
P
I
1.0  
A
275  
mW  
D
Operating and Storage  
Junction Temperature  
T ,T  
J stg  
-65 to +150  
455  
°C  
Thermal Resistance  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =280V  
MIN  
TYP  
MAX  
100  
UNITS  
nA  
µA  
V
I
I
R
R
R
V =280V, T =150°C  
100  
R
A
BV  
I =100µA  
350  
R
R
V
V
V
I =20mA  
0.87  
1.0  
V
F
F
F
F
I =100mA  
V
F
I =200mA  
1.25  
5.0  
V
F
C
V =0, f=1.0 MHz  
pF  
ns  
T
R
t
I =I =30mA, Rec. to 3.0mA, R =100Ω  
50  
rr  
R
F
L
R0 (17-August 2004)  

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