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CMR1F-02M PDF预览

CMR1F-02M

更新时间: 2024-11-08 22:09:43
品牌 Logo 应用领域
CENTRAL 二极管光电二极管快速恢复二极管
页数 文件大小 规格书
2页 89K
描述
FAST RECOVERY RECTIFIER 1.0 AMP, 200 THRU 1,000 VOLTS

CMR1F-02M 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.14Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e0最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.15 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CMR1F-02M 数据手册

 浏览型号CMR1F-02M的Datasheet PDF文件第2页 
TM  
CMR1F-02M  
CMR1F-04M  
CMR1F-06M  
CMR1F-10M  
Ce n t r a l  
NEW  
S e m ic o n d u c t o r Co r p .  
FEATURES:  
FAST RECOVERY RECTIFIER  
1.0 AMP, 200 THRU 1,000 VOLTS  
SUPER MINIATURE CASE  
SPECIAL SELECTIONS AVAILABLE  
LOW COST  
SUPERIOR LOT TO LOT CONSISTENCY  
HIGH RELIABILITY  
“C” BEND CONSTRUCTION PROVIDES  
STRAIN RELIEF WHEN MOUNTED ON  
PC BOARD  
TM  
SUPER  
SUPER  
mini  
SMA CASE  
GLASS PASSIVATED CHIP  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 1.0 Amp Surface Mount Fast Recovery Silicon Rectifier is a high  
quality, well constructed, highly reliable component designed for use in all types of commercial,  
industrial, entertainment, computer, and automotive applications where small size is required. The  
SMA case occupies 30% less board space than the SMB case. To order devices on 12mm Tape and  
Reel (5000/13" Reel), add TR13 suffix to part number.  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL CMR1F  
-02M  
CMR1F CMR1F  
CMR1F  
-10M UNITS  
1000  
1000  
700  
-04M  
400  
-06M  
600  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
V
200  
200  
140  
V
V
V
A
A
RRM  
R
400  
600  
RMS Reverse Voltage  
V
280  
420  
R(RMS)  
Average Forward Current (T =120°C) I  
1.0  
30  
L
O
Peak Forward Surge Current (8.3ms) I  
Operating and Storage  
FSM  
Junction Temperature  
Thermal Resistance  
T ,T  
-65 to +150  
30  
°C  
J stg  
Θ
°C/W  
JL  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
MIN  
TYP  
MAX UNITS  
I
I
V =Rated V  
R
5.0  
200  
1.3  
µA  
µA  
V
R
R
RRM  
RRM  
V =Rated V  
, T =125°C  
R
A
V
I =1.0A  
F
F
C
V =4.0V, f=1.0MHz  
15  
pF  
J
R
222  

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