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CMR1S-01TR13LEADFREE PDF预览

CMR1S-01TR13LEADFREE

更新时间: 2024-09-18 21:21:47
品牌 Logo 应用领域
CENTRAL 光电二极管
页数 文件大小 规格书
2页 175K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, SMB, 2 PIN

CMR1S-01TR13LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.33其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

CMR1S-01TR13LEADFREE 数据手册

 浏览型号CMR1S-01TR13LEADFREE的Datasheet PDF文件第2页 
TM  
Central  
CMR1S-01  
CMR1S-02  
Semiconductor Corp.  
SUPER FAST RECOVERY RECTIFIER  
1.0 AMP, 100 AND 200 VOLTS  
FEATURES:  
• FASTER SWITCHING SPEED (35ns Max)  
• LOWER V (.95V)  
F
• RUNS COOLER THAN ULTRA FAST  
RECTIFIER  
• LOW COST - HIGH RELIABILITY  
• GLASS PASSIVATED CHIP  
• “C” BEND CONSTRUCTION PROVIDES  
STRAIN RELIEF WHEN MOUNTED  
ON PC BOARD  
SMB CASE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 1.0 Amp Surface Mount Silicon Super Fast Recovery Rectifier is a  
high quality, well constructed, highly reliable component designed for use in all types of commercial,  
industrial, entertainment, computer, and automotive applications. To order devices on 12mm Tape and  
Reel (3000/13" Reel), add TR13 suffix to part number.  
MARKING CODES:  
CMR1S-01: CSF01  
CMR1S-02: CSF02  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL  
CMR1S  
-01  
CMR1S  
-02  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
RMS Reverse Voltage  
Average Forward Current  
Peak Forward Surge Current (8.3ms)  
Operating and Storage  
V
V
V
100  
200  
V
RRM  
R
R(RMS)  
100  
70  
200  
140  
V
V
A
A
I
I
1.0  
30  
O
FSM  
Junction Temperature  
Thermal Resistance  
T ,T  
stg  
JL  
-65 to +150  
20  
°C  
°C/W  
J
Θ
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
R
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
V =Rated V  
5.0  
µA  
R
R
RRM  
RRM  
V =Rated V  
, T =100°C  
500  
0.95  
35  
µA  
V
ns  
pF  
R
A
V
I =1.0A  
F
F
t
I =0.5A, I =1.0A, Recover to 0.25A  
rr  
F
R
C
V =4.0V, f=1.0MHz  
10  
J
R
R3 (26-September 2002)  

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