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CMR1H-04MFL PDF预览

CMR1H-04MFL

更新时间: 2024-11-24 01:19:39
品牌 Logo 应用领域
CENTRAL 快速恢复二极管
页数 文件大小 规格书
3页 847K
描述
SURFACE MOUNT SILICON HYPERFAST RECOVERY RECTIFIER 1.0 AMP, 400 VOLT

CMR1H-04MFL 数据手册

 浏览型号CMR1H-04MFL的Datasheet PDF文件第2页浏览型号CMR1H-04MFL的Datasheet PDF文件第3页 
CMR1H-04MFL  
SURFACE MOUNT SILICON  
HYPERFAST  
RECOVERY RECTIFIER  
1.0 AMP, 400 VOLT  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMR1H-04MFL  
is a 1.0 Amp, HyperFast recovery rectifier constructed  
with a glass passivated die and packaged in the low  
profile and thermally efficient SMAFL case. The device  
is ideal for applications requiring extremely fast recovery  
times, low switching losses and high voltage capability.  
The SMAFL fits on existing industry standard SMA  
mounting pad layouts.  
SMAFL CASE  
MARKING CODE: CSF04M  
APPLICATIONS:  
FEATURES:  
• Flyback diode  
• HyperFast recovery time (20ns TYP)  
• Low switching losses  
• Thermally efficient package  
• Fits on standard SMA pad layouts  
• Freewheeling diode  
• DC-DC output rectification  
• Voltage clamping  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
400  
400  
V
RRM  
V
V
V
R
RMS Reverse Voltage  
V
280  
R(RMS)  
Average Forward Current (T =120°C)  
L
I
1.0  
A
O
Peak Forward Surge Current, tp=8.3ms  
Operating and Storage Junction Temperature  
Thermal Resistance  
I
30  
A
FSM  
T , T  
-65 to +150  
30  
°C  
°C/W  
J
stg  
Θ
JL  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =400V  
TYP  
0.03  
MAX  
1.0  
UNITS  
μA  
I
R
R
I
V =400V, T =100°C  
150  
μA  
V
R
R
A
V
I =1.0A  
1.1  
13  
20  
1.25  
F
F
C
V =4.0V, f=1.0MHz  
pF  
ns  
J
R
t
I =0.5A, I =1.0A, I =0.25A  
25  
rr  
F
R
rr  
R1 (19-August 2013)  

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