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CMR1-06M PDF预览

CMR1-06M

更新时间: 2024-11-22 22:24:51
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 89K
描述
GENERAL PURPOSE RECTIFIER 1.0 AMP, 200 THRU 1,000 VOLTS

CMR1-06M 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.13其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CMR1-06M 数据手册

 浏览型号CMR1-06M的Datasheet PDF文件第2页 
TM  
CMR1-02M  
CMR1-04M  
CMR1-06M  
CMR1-10M  
Ce n t r a l  
S e m ic o n d u c t o r Co r p .  
NEW  
FEATURES:  
GENERAL PURPOSE RECTIFIER  
1.0 AMP, 200 THRU 1,000 VOLTS  
SUPER MINIATURE CASE  
SPECIAL SELECTIONS AVAILABLE  
LOW COST  
SUPERIOR LOT TO LOT CONSISTENCY  
HIGH RELIABILITY  
“C” BEND CONSTRUCTION PROVIDES  
STRAIN RELIEF WHEN MOUNTED ON PC  
BOARD  
TM  
SUPER  
SUPER  
mini  
SMA CASE  
GLASS PASSIVATED CHIP  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 1.0 Amp Surface Mount Silicon Rectifier is a high quality, well  
constructed,highlyreliablecomponentdesignedforuseinalltypesofcommercial,industrial,entertainment,  
computer, and automotive applications where small size is required. The SMA case occupies 30% less  
board space than the SMB case. To order devices on 12mm Tape and Reel (5000/13" Reel), add TR13  
suffix to part number.  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL CMR1-02M CMR1-04M CMR1-06M CMR1-10M UNITS  
Peak Repetitive Reverse Voltage V  
200  
200  
140  
400  
400  
280  
600  
600  
420  
1000  
1000  
700  
V
V
V
A
A
RRM  
R
DC Blocking Voltage  
RMS Reverse Voltage  
V
V
R(RMS)  
Average Forward Current (T =100°C) I  
1.0  
30  
L
O
Peak Forward Surge Current (8.3ms) I  
FSM  
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
-65 to +150  
30  
°C  
°C/W  
Θ
JL  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
1.1  
5.0  
50  
UNITS  
V
I =1.0A  
V
µA  
µA  
pF  
F
F
I
V =Rated V  
R
R
RRM  
RRM  
I
V =Rated V  
, T =125°C  
R
R
A
C
V =4.0V, f=1.0MHz  
8.0  
J
R
220  

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