是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.76 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 0.16 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.35 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CMPDM3590TRLEADFREE | CENTRAL |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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CMPDM3590TRPBFREE | CENTRAL |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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CMPDM7002A | CENTRAL |
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N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET |
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CMPDM7002A_10 | CENTRAL |
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SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
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CMPDM7002AE | CENTRAL |
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60V, 300mA N-Channel MOSFET in SOT-23 package |
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CMPDM7002AE_1310 | CENTRAL |
获取价格 |
SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET |
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CMPDM7002AEPBFREE | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, |
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CMPDM7002AG | CENTRAL |
获取价格 |
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
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CMPDM7002AGBK | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Meta |
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CMPDM7002AGBKLEADFREE | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, |
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