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CMPD7000EPBFREE PDF预览

CMPD7000EPBFREE

更新时间: 2024-02-27 00:24:32
品牌 Logo 应用领域
CENTRAL 整流二极管开关光电二极管
页数 文件大小 规格书
2页 81K
描述
Rectifier Diode,

CMPD7000EPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.76
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.7 V
最高工作温度:150 °C最大输出电流:0.2 A
最大重复峰值反向电压:100 V最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

CMPD7000EPBFREE 数据手册

 浏览型号CMPD7000EPBFREE的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
CMPD7000  
S e m ic o n d u c t o r Co r p .  
DUAL SILICON SWITCHING DIODE  
SERIES CONNECTION  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR  
CMPD7000typeisanultra-highspeedsilicon  
switching diodes manufactured by the  
epitaxial planar process, in an epoxy molded  
surfacemountpackage,connectedinaseries  
configuration, designed for high speed  
switching applications.  
Marking Code is C5C.  
SOT-23 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
Average Forward Current  
Peak Forward Current  
Power Dissipation  
V
100  
200  
500  
350  
V
RRM  
I
I
P
mA  
mA  
mW  
O
FM  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
T ,T  
-65 to +150  
357  
C
C/W  
J stg  
o
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
BV  
R
I =100µA  
100  
V
nA  
µA  
nA  
V
V
V
pF  
ns  
R
I
V =50V  
300  
100  
500  
0.70  
0.82  
1.10  
1.5  
R
R
R
R
o
I
I
V =50V, T =125 C  
R
A
VR=100V  
V
V
F
V
I =1.0mA  
0.55  
0.67  
0.75  
F
F
I =10mA  
F
I =100mA  
F
F
C
T
V =0, f=1 MHz  
R
t
I =IF=10mA, R =100, Rec. to 1.0mA  
2.0  
4.0  
rr  
R
L
144  

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