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CMPD7006

更新时间: 2024-02-28 14:43:13
品牌 Logo 应用领域
CENTRAL 整流二极管开关光电二极管高压
页数 文件大小 规格书
2页 112K
描述
SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE

CMPD7006 技术参数

生命周期:Active包装说明:PLASTIC PACKAGE-3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.75
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G3最大非重复峰值正向电流:4 A
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.35 W最大重复峰值反向电压:600 V
最大反向恢复时间:0.5 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

CMPD7006 数据手册

 浏览型号CMPD7006的Datasheet PDF文件第2页 
TM  
CMPD7006  
CMPD7006A  
CMPD7006C  
CMPD7006S  
Central  
Semiconductor Corp.  
DESCRIPTION:  
SURFACE MOUNT  
VERY HIGH VOLTAGE  
The Central Semiconductor CMPD7006,  
CMPD7006A, CMPD7006C and CMPD7006S  
are silicon switching diodes with various diode  
configurations, manufactured by the epitaxial  
planar process and packaged in an epoxy  
molded SOT-23 surface mount case. These  
devices are designed for applications requiring  
high voltage switching diodes.  
SILICON SWITCHING DIODE  
SOT-23 CASE  
The following configurations are available:  
CMPD7006  
SINGLE  
MARKING CODE: C7006  
CMPD7006A DUAL, COMMON ANODE  
CMPD7006C DUAL, COMMON CATHODE  
CMPD7006S DUAL, IN SERIES  
MARKING CODE: C706A  
MARKING CODE: C706C  
MARKING CODE: C706S  
MAXIMUM RATINGS PER DIODE: (T =25°C)  
A
SYMBOL  
UNITS  
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1.0 µs  
Forward Surge Current, tp=1.0 s  
Power Dissipation  
V
600  
600  
100  
300  
4.0  
V
R
V
V
mA  
mA  
A
RRM  
I
F
I
FRM  
FSM  
I
I
1.0  
A
FSM  
P
350  
mW  
D
Operating and Storage  
Junction Temperature  
T , T  
stg  
-65 to +150  
357  
°C  
J
Thermal Resistance  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =480V  
MIN  
TYP  
7.0  
MAX  
100  
100  
UNITS  
I
I
nA  
µA  
V
V
V
V
pF  
ns  
R
R
R
V =480V, T =150°C  
R
A
BV  
I =1.0µA  
600  
675  
0.88  
1.04  
1.16  
R
R
V
V
V
I =10mA  
1.0  
1.2  
1.4  
5.0  
500  
F
F
F
F
I =50mA  
F
I =100mA  
F
C
V =0V, f=1.0 MHz  
T
R
t
I =I =10mA, R =100Ω, Rec. to 1.0mA  
R F L  
rr  
R0 (8-December 2003)  

与CMPD7006相关器件

型号 品牌 获取价格 描述 数据表
CMPD7006A CENTRAL

获取价格

SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE
CMPD7006ABK CENTRAL

获取价格

Rectifier Diode, 2 Element, 0.1A, 600V V(RRM), Silicon, PLASTIC PACKAGE-3
CMPD7006ATR CENTRAL

获取价格

Rectifier Diode, 2 Element, 0.1A, 600V V(RRM), Silicon, PLASTIC PACKAGE-3
CMPD7006ATR13 CENTRAL

获取价格

Rectifier Diode, 2 Element, 0.1A, 600V V(RRM), Silicon, PLASTIC PACKAGE-3
CMPD7006BK CENTRAL

获取价格

Rectifier Diode, 1 Element, 0.1A, 600V V(RRM), Silicon, PLASTIC PACKAGE-3
CMPD7006C CENTRAL

获取价格

SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE
CMPD7006CBK CENTRAL

获取价格

Rectifier Diode, 2 Element, 0.1A, 600V V(RRM), Silicon, PLASTIC PACKAGE-3
CMPD7006CTR CENTRAL

获取价格

Rectifier Diode, 2 Element, 0.1A, 600V V(RRM), Silicon, PLASTIC PACKAGE-3
CMPD7006CTR13 CENTRAL

获取价格

Rectifier Diode, 2 Element, 0.1A, 600V V(RRM), Silicon, PLASTIC PACKAGE-3
CMPD7006S CENTRAL

获取价格

SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE