Datasheet > CMPD914ETR13PBFREE

CMPD914ETR13PBFREE

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
CENTRAL		二极管
页数	文件大小	规格书
2页	463K
描述
Rectifier Diode, 1 Element, 0.25A, 120V V(RRM),

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技术参数
数据手册

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CMPD914ETR13PBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.85 V	最大非重复峰值正向电流：	4 A
元件数量：	1	最高工作温度：	150 °C
最大输出电流：	0.25 A	最大重复峰值反向电压：	120 V
最大反向恢复时间：	0.004 µs	子类别：	Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

CMPD914ETR13PBFREE 数据手册

CMPD914E

ENHANCED SPECIFICATION

SURFACE MOUNT

HIGH SPEED

SILICON SWITCHING DIODE

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD914E is

an Enhanced version of the CMPD914 High Speed

Switching Diode in a SOT-23 surface mount package,

designed for high speed applications.

MARKING CODE: C5DE

FEATURED ENHANCED SPECIFICATIONS:

♦ BV from 100V min to 120V min. (150V TYP)

SOT-23 CASE

♦ V from 1.0V max to 0.85V max. (0.72V TYP)

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

♦^{Peak Repetitive Reverse Voltage}

Continuous Forward Current

120

RRM

250

°C

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0ms

Peak Forward Surge Current, tp=1.0s

Power Dissipation

250

FRM

4000

2000

1000

350

FSM

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

120

TYP

MAX

UNITS

μA

V =20V

V =75V

5.0

I =100µA

150

♦

I =10mA

0.720

0.915

0.850

0.970

2.0

♦♦ _VF

I =100mA

V =0, f=1.0MHz

I =I =10mA, R =100Ω, Rec. to 1.0 mA

4.0

♦ Enhanced specification.

♦♦ Additional Enhanced specification.

R3 (25-January 2010)

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