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CMPD7000ETR PDF预览

CMPD7000ETR

更新时间: 2024-01-27 00:15:46
品牌 Logo 应用领域
CENTRAL 光电二极管
页数 文件大小 规格书
2页 465K
描述
Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon, PLASTIC PACKAGE-3

CMPD7000ETR 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.27
其他特性:HIGH SPEED SWITCH配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.65 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:120 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

CMPD7000ETR 数据手册

 浏览型号CMPD7000ETR的Datasheet PDF文件第2页 
CMPD7000E  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
DUAL, IN SERIES  
SILICON SWITCHING DIODES  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPD7000E is  
an Enhanced version of the CMPD7000 Dual, Series  
Configuration, Ultra-High Speed Switching Diode. This  
device is manufactured by the epitaxial planar process,  
in an epoxy molded surface mount SOT-23 package,  
designed for high speed switching applications.  
MARKING CODE: C5CE  
FEATURED ENHANCED SPECIFICATIONS:  
BV from 100V min to 120V min.  
SOT-23 CASE  
R
V from 1.1V max to 1.0V max.  
F
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
Average Forward Current  
Peak Forward Current  
V
120  
200  
RRM  
I
mA  
O
I
500  
mA  
FM  
Power Dissipation  
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
MIN  
TYP  
MAX  
300  
100  
500  
UNITS  
nA  
μA  
nA  
V
I
I
I
V =50V  
R
R
R
R
V =50V, T =125°C  
R
A
V =100V  
R
BV  
I =100µA  
R
120  
0.55  
0.67  
0.85  
150  
0.59  
0.72  
0.91  
1.5  
R
V  
I =1.0mA  
0.65  
0.77  
1.0  
V
F
F
F
F
V
I =10mA  
V
F
V
I =100mA  
V
F
C
V =0, f=1.0MHz  
2.6  
pF  
ns  
T
R
t
I =I =10mA, R =100Ω, Rec. to 1.0mA  
2.0  
4.0  
rr  
R
F
L
Enhanced Specification  
R4 (27-January 2010)  

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