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CMM1100-BD_10

更新时间： 2024-11-30 09:27:35
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MIMIX /
页数 文件大小 规格书
9页 1690K
描述
2.0-18.0 GHz GaAs MMIC

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2.0-18.0 GHz GaAs MMIC  
Low Noise Amplifier  
February 2010 - Rev-05-Feb-10  
CMM1100-BD  
Chip Device Layout  
Features  
Self Bias Architecture  
17.0 dB Small Signal Gain  
3.5 dB Noise Figure  
+16.0 dBm P1dB Compression Point  
100% Commercial-Level Visual Inspection Using  
Mil-Std-883 Method 2010  
General Description  
Mimix Broadband’s two stage 2.0-18.0 GHz GaAs MMIC  
low noise amplifier has a small signal gain of 17.0 dB  
with a noise figure of 3.5 dB across the band.This MMIC  
uses Mimix Broadband’s GaAs PHEMT device model  
technology, and is based upon optical lithography to  
ensure high repeatability and uniformity.The chip has  
surface passivation to protect and provide a rugged  
part with backside via holes and gold metallization to  
allow either a conductive epoxy or eutectic solder die  
attach process.This device is well suited for fiber optic,  
microwave radio, military, space, telecom infrastructure,  
test instrumentation and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Input Power (Pin)  
+8.0 VDC  
180 mA  
+10 dBm  
Storage Temperature (Tstg) -65 to +165 ºC  
Operating Temperature (Ta) -55 to +85 ºC  
Channel Temperature (Tch)1 +175 ºC  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
Min.  
2.0  
6.0  
Typ.  
-
9.0  
Max.  
18.0  
-
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
dB  
dB  
dB  
dB  
8.0  
14.0  
-
-
17.0  
17.0  
+/-0.5  
40.0  
3.5  
+16.0  
+33.0  
+26.0  
+5.0  
100  
-
-
-
-
5.0  
-
-
-
Noise Figure (NF)  
-
dB  
Output Power for 1 dB Compression (P1dB)  
Output Second Order Intercept Point (OIP2)  
Output Third Order Intercept Point (OIP3)  
Drain Bias Voltage (Vd1,2)  
dBm  
dBm  
dBm  
VDC  
mA  
+13.0  
-
-
-
+7.0  
120  
Supply Current (Id) (Vd1,2=5.0V)  
90  
100% on-wafer DC testing and 100% RF wafer qualification.Wafer qualification includes sample testing from each quadrant  
with an 80% pass rate required.  
Page 1 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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