Datasheet > CMM1118-QT_10

CMM1118-QT_10

更新时间： 2024-11-30 12:50:07

品牌	Logo	应用领域
MIMIX		/
页数	文件大小	规格书
6页	1231K
描述
11.0-20.0 GHz GaAs MMIC

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数据手册

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CMM1118-QT_10 数据手册

11.0-20.0 GHz GaAs MMIC

Packaged Driver Amplifier

March 2010 - Rev 13-Mar-10

CMM1118-QT

Features

20 dB Gain

14 dBm P1dB

3x3 QFN Package

Single Power Supply

5-7 V, 110 mA Self Bias

On-Chip ESD Protection

Circuit Description

Mimix Broadband’s 3 stage 11.0 to 20.0 GHz driver

amplifier is packaged in surface mount 3x3 QFN

package. The device is a self-biased, single supply

design with 20 dB gain and 14 dBm P1dB.This MMIC

uses Mimix Broadband’s optical pHEMT process.

Absolute Maximum Ratings

Supply Voltage

+8 V

RF Input Power

+10 dBm

Storage Temperature (Tstg)

Junction Temperature

Operating Temperature

-55 ºC to +125 ºC

175 ºC

-40 ºC to +85ºC

Electrical Characteristics (T=25ºC)

Parameter

Frequency Range

Gain

Gain Delta

Output P1dB

Output IP3

Input Return Loss

Current

Units

GHz

Min.

Typ.

Max.

-8

dBm

130

Supply Voltage

Typical Parameters (5V)

Parameter

Units

Typical

Frequency

Gain

IP Return Loss

Op Return Loss

P1dB

GHz

dBm

-20

-11

-12

-15

-8

-6

-5

-12

OIP3

Page 1 of 6

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

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CMM1118-XX-0L0T	MIMIX	获取价格	RF/Microwave Amplifier, 1 Func, GAAS