CMM1200

更新时间： 2024-11-30 03:26:03

品牌	Logo	应用领域
MIMIX		放大器
页数	文件大小	规格书
5页	458K
描述
2.0-6.0 GHz GaAs MMIC Low Noise Amplifier

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CMM1200 数据手册

2.0-6.0 GHz GaAs MMIC

Low Noise Amplifier

August 2006 - Rev 02-Aug-06

CMM1200

Chip Diagram

2.0 to 6.0 GHz

GaAs MMIC

Low-Noise Amplifier

Advanced Product Information

May 2005 V1.5

(1 of 5)

Features

Small Size: 1.60 x 1.55 x 0.076 mm

Integrated On-Chip Drain Bias Coil

Integrated On-Chip DC Blocking

Single Bias Operation

Directly Cascadable – Fully Matched, Novel

Feedback & Distributed Amplifier Design

P1dB: 15.5 dBm @ 6 GHz, Typ.

High Linear Gain: 17.5 dB Typ.

Noise Figure: 3.3 dB Typ. @ 6 GHz

pHEMT Technology

Silicon Nitride Passivation

Specifications (TA = 25°C, Vdd = 5V)

Parameters

Units

Min

2.0

16.0

Typ

Max

Frequency Range

Linear Gain

GHz

dBm

6.0

17.5

15.5

Gain Variation (over operating frequency)

Power Output (@1 dB Gain Compression)

P1dB Variation (over operating frequency)

Saturated Output Power

Third Order Intercept Point (@ 6 GHz)

Second Order Intercept Point (@ 6 GHz)

Noise Figure (@6 GHz)

Input Return Loss

Output Return Loss

Current

2.0

14.0

19.0

1.0

23.0

25.5

41.0

3.3

3.8

-9.5

-12.0

115

100

Thermal Resistance

°C/W

34.0

Stability

Unconditionally Stable

Notes: 1. Tested on Celeritek connectorized evaluation board.

2. Measured on wafer.

Absolute Maximum Ratings ¹

Die Attach and Bonding Procedures

Parameter

Rating

Die Attach: Eutectic die attach is recommended. For eutec-

tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage

Temperature: 290°C, 5°C; Handling Tool: Tweezers; Time: 1

min or less.

Drain Voltage

Drain Current

4.5V (min.) / 8.0V (max.)

150 mA

Continuous Power Dissipation

Input Power

Storage Temperature

Channel Temperature

Operating Backside Temperature ²

1.2 W

10 dBm

-50°C to +150°C

175°C

Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-

stressed); Thermocompression bonding is preferred over ther-

mosonic bonding. For thermocompression bonding: Stage

Temperature: 250°C; Bond Tip Temperature: 150°C; Bonding

Tip Pressure: 18 to 40 gms depending on size of wire.

-40°C Min.

Notes: 1. Operation outside these limits can cause permanent damage.

2. Calculation maximum operating temperature:

Tmax = 175–(Pdis [W] x 34) [°C].

Page 1 of 5

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

12 3 4 5

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与CMM1200相关器件

型号	品牌	获取价格	描述	数据表
CMM1200-BD	MIMIX	获取价格	2.0 to 6.0 GHz GaAs MMIC Low-Noise Amplifer
CMM1200-BD_07	MIMIX	获取价格	2.0-6.0 GHz GaAs MMIC Low Noise Amplifier
CMM1200-BD-000V	MIMIX	获取价格	2.0-6.0 GHz GaAs MMIC Low Noise Amplifier
CMM1301-AM	ETC	获取价格	RF Amplifier
CMM1301-AM-000T	MIMIX	获取价格	Narrow Band Medium Power Amplifier, 1700MHz Min, 2200MHz Max, PLASTIC, SOIC-16
CMM1305AK	ETC	获取价格	Analog IC
CMM1306AK	ETC	获取价格	Analog IC
CMM1320AK	ETC	获取价格	Analog IC
CMM1321	ETC	获取价格	1.85 to 1.91 GHz 5V, 28.5 dBm, PCS Power Amplifier
CMM1321-AK	ETC	获取价格	1.85 to 1.91 GHz 5V, 28.5 dBm, PCS Power Amplifier

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