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CMM1100-BD

更新时间： 2024-11-30 03:26:03
品牌 Logo 应用领域
MIMIX 放大器
页数 文件大小 规格书
6页 444K
描述
2.0-18.0 GHz GaAs MMIC Low Noise Amplifier

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CMM1100-BD 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：DIE OR CHIPReach Compliance Code：unknown
风险等级：5.08构造：COMPONENT
增益：16.5 dB最大输入功率 (CW)：10 dBm
JESD-609代码：e3功能数量：1
最大工作频率：18000 MHz最小工作频率：2000 MHz
最高工作温度：85 °C最低工作温度：-40 °C
封装等效代码：DIE OR CHIP电源：5 V
射频/微波设备类型：WIDE BAND LOW POWER子类别：RF/Microwave Amplifiers
最大压摆率：120 mA技术：GAAS
端子面层：Matte Tin (Sn)Base Number Matches：1

CMM1100-BD 数据手册

 浏览型号CMM1100-BD的Datasheet PDF文件第2页浏览型号CMM1100-BD的Datasheet PDF文件第3页浏览型号CMM1100-BD的Datasheet PDF文件第4页浏览型号CMM1100-BD的Datasheet PDF文件第5页浏览型号CMM1100-BD的Datasheet PDF文件第6页 
2.0-18.0 GHz GaAs MMIC  
Low Noise Amplifier  
May 2006 - Rev 01-May-06  
CMM1100  
Features  
Chip Device Layout  
Self Bias Architecture  
18.0 dB Small Signal Gain  
3.5 dB Noise Figure  
+11.0 dBm P1dB Compression Point  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s two stage 2.0-18.0 GHz GaAs MMIC  
low noise amplifier has a small signal gain of 18.0 dB  
with a noise figure of 3.5 dB across the band.This MMIC  
uses Mimix Broadband’s 0.3 µm GaAs PHEMT device  
model technology, and is based upon optical  
lithography to ensure high repeatability and uniformity.  
The chip has surface passivation to protect and provide  
a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well  
suited for fiber optic, microwave radio, military, space,  
telecom infrastructure, test instrumentation and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Input Power (Pin)  
+8.0 VDC  
180 mA  
+10 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
1
Operating Temperature (Ta) -55 to MTTF Table  
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
dB  
dB  
dB  
Min.  
2.0  
-
-
-
-
-
-
Typ.  
-
Max.  
18.0  
-
-
-
-
-
-
Frequency Range (f)  
Input Return Loss (S11)  
10.0  
15.0  
18.0  
+/-1.0  
40.0  
3.5  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
Noise Figure (NF)  
Output Power for 1 dB Compression (P1dB)  
Output Second Order Intercept Point (OIP2)  
Output Third Order Intercept Point (OIP3)  
Drain Bias Voltage (Vd1,2)  
dBm  
dBm  
dBm  
VDC  
mA  
-
-
-
+16.0  
+41.0  
+25.0  
+5.0  
105  
-
-
-
+4.5  
90  
+7.0  
120  
Supply Current (Id) (Vd1,2=5.0V)  
100% on-wafer DC testing and 100% RF wafer qualification.Wafer qualification includes sample testing from each quadrant  
with an 80% pass rate required.  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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