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CMM0618-BD_07 PDF预览

CMM0618-BD_07

更新时间: 2024-11-30 03:26:03
品牌 Logo 应用领域
MIMIX 放大器功率放大器
页数 文件大小 规格书
5页 155K
描述
6.0-18.0 GHz GaAs MMIC Power Amplifier

CMM0618-BD_07 数据手册

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6.0-18.0 GHz GaAs MMIC  
Power Amplifier  
August 2007 - Rev 30-Aug-07  
CMM0618-BD  
Chip Device Layout  
Features  
Wide Band Power Amplifier  
Positive Gain Slope  
10.5 dB Small Signal Gain  
+29.0 dBm P1dB Compression Point  
+36.0 dBm Third Order Intercept  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s two stage 6.0-18.0 GHz GaAs  
MMIC power amplifier has a small signal gain of 10.5  
dB with a +29.0 dBm P1dB output compression point  
and is ideal for use in a balanced configuration.This  
MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT  
device model technology, and is based upon electron  
beam lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive  
epoxy or eutectic solder die attach process.This  
device is well suited for Test Instrumentation, Military,  
Space, Microwave Point-to-Point Radio, SATCOM and  
VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id1,2)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+8.0 VDC  
500, 500 mA  
+0.0 VDC  
+25.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Graph1  
Channel Temperature (Tch) MTTF Graph1  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Units  
GHz  
dB  
Min.  
6.0  
-
Typ.  
-
7.0  
Max.  
18.0  
-
Output Return Loss (S22)  
dB  
-
5.0  
-
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
Output Power for 1dB Compression (P1dB)  
Output Third Order Intermods (OIP3)  
Saturated Output Power (Psat)  
Drain Bias Voltage (Vd1,2)  
Gate Bias Voltage (Vg1,2)  
Supply Current (Id1) (Vd=7.0 V,Vg=-0.8 V Typical)  
Supply Current (Id2) (Vd=7.0 V,Vg=-0.8 V Typical)  
dB  
dB  
dB  
dBm  
dBm  
dBm  
VDC  
VDC  
mA  
mA  
-
-
-
-
-
-
10.5  
+/-1.5  
40.0  
+29.0  
+36.0  
+30.0  
+6.0  
-0.8  
-
-
-
-
-
-
-
-2.0  
-
+7.5  
-0.1  
425  
425  
375  
375  
100% on-wafer DC testing and 100% RF wafer qualification.Wafer qualification includes sample testing from each quadrant  
with an 80% pass rate required.  
Page 1 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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