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CMLSH05-4DO PDF预览

CMLSH05-4DO

更新时间: 2024-02-25 10:25:08
品牌 Logo 应用领域
CENTRAL 肖特基二极管
页数 文件大小 规格书
2页 87K
描述
SURFACE MOUNT PICOmini-TM DUAL ISOLATED, LOW V-f OPPOSING SILICON SCHOTTKY DIODES

CMLSH05-4DO 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.13 V最大非重复峰值正向电流:10 A
元件数量:1最高工作温度:150 °C
最大输出电流:0.5 A最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

CMLSH05-4DO 数据手册

 浏览型号CMLSH05-4DO的Datasheet PDF文件第2页 
TM  
CMLSH05-4DO  
Central  
TM  
Semiconductor Corp.  
SURFACE MOUNT PICOmini  
DUAL ISOLATED, LOW V  
OPPOSING SILICON  
SCHOTTKY DIODES  
F
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR  
CMLSH05-4DO consists of two (2) individual  
electrically isolated 40 volt Schottky Diodes with  
opposing polarity and packaged in a space saving  
SOT-563 surface mount case. This PICOmini™  
device has been designed for applications  
requiring a low forward voltage drop.  
MARKING CODE: CO4  
SOT-563 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
V
40  
500  
3.5  
10  
V
RRM  
I
mA  
A
F
Peak Repetitive Forward Current, tp 1ms  
Forward Surge Current, tp=8ms  
Power Dissipation  
I
FRM  
I
A
FSM  
P
250  
mW  
D
Operating and Storage  
Junction Temperature  
T , T  
stg  
-65 to +150  
500  
°C  
J
Thermal Resistance  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
V = 10V  
20  
µA  
R
R
V = 30V  
100  
µA  
V
R
VR  
F
R
B
V
V
V
V
V
I = 500µA  
40  
R
I = 100µA  
0.13  
0.21  
0.27  
0.35  
0.47  
50  
V
V
F
I = 1.0mA  
F
F
I = 10mA  
V
F
F
I = 100mA  
V
F
F
I = 500mA  
V
F
F
C
V = 1.0V, f=1.0 MHz  
pF  
T
R
R1 (27-January 2004)  

CMLSH05-4DO 替代型号

型号 品牌 替代类型 描述 数据表
BAS40-07V NEXPERIA

类似代替

General-purpose dual Schottky diodeProduction
BAS40-07V,115 NXP

功能相似

BAS40 series; 1PSxxSB4x series - General-purpose Schottky diodes SOT 6-Pin

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