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CMLSH2-4LATR PDF预览

CMLSH2-4LATR

更新时间: 2024-11-01 13:06:55
品牌 Logo 应用领域
CENTRAL 整流二极管肖特基二极管测试光电二极管
页数 文件大小 规格书
3页 662K
描述
Rectifier Diode, Schottky, 4 Element, 0.2A, 40V V(RRM), Silicon, HOLOGEN FREE, PICOMINI-6

CMLSH2-4LATR 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HOLOGEN FREE, PICOMINI-6针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.74
配置:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.26 V
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:4端子数量:6
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.35 W认证状态:Not Qualified
最大重复峰值反向电压:40 V最大反向电流:0.2 µA
最大反向恢复时间:0.005 µs反向测试电压:30 V
子类别:Other Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

CMLSH2-4LATR 数据手册

 浏览型号CMLSH2-4LATR的Datasheet PDF文件第2页浏览型号CMLSH2-4LATR的Datasheet PDF文件第3页 
TM  
CMLSH2-4LA CMLSH2-4LS  
CMLSH2-4LC CMLSH2-4LSB  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
DUAL PAIR, LOW V  
F
DESCRIPTION:  
SILICON SCHOTTKY DIODES  
The CENTRAL SEMICONDUCTOR CMLSH2-4L  
Series consists of Dual pairs of Common Anode,  
Common Cathode, and In-Series Low V Schottky  
F
Diodes, manufactured in a PICOmini™ SOT-563  
surface mount package.  
SOT-563 CASE  
Devices are Halogen Free by design  
DEVICE CONFIGURATIONS:  
CMLSH2-4LA  
CMLSH2-4LC  
CMLSH2-4LS  
CMLSH2-4LSB  
DUAL PAIR, COMMON ANODE  
MARKING CODE: 4AL  
MARKING CODE: 4CL  
MARKING CODE: 4SL  
MARKING CODE: 4SB  
DUAL PAIR, COMMON CATHODE  
DUAL PAIR, IN SERIES  
DUAL PAIR, IN SERIES  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
V
40  
200  
V
RRM  
I
mA  
mA  
F
Peak Repetitive Forward Current  
Forward Surge Current, tp=10ms  
Power Dissipation (Note 1)  
I
300  
FRM  
I
600  
mA  
FSM  
P
P
P
350  
mW  
mW  
mW  
°C  
D
D
D
Power Dissipation (Note 2)  
300  
Power Dissipation (Note 3)  
150  
Operating and Storage Junction Temperature  
Thermal Resistance (Note 1)  
T , T  
stg  
-65 to +150  
357  
J
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
V =30V  
MIN  
TYP  
MAX  
200  
UNIT  
nA  
I
100  
R
R
BV  
I =100μA  
40  
55  
V
V
R
R
V
V
V
V
V
I =100μA  
0.24  
0.29  
0.31  
0.54  
0.67  
0.26  
0.31  
0.33  
0.60  
0.75  
10  
F
F
F
F
F
F
I =500μA  
V
F
I =1.0mA  
V
F
I =50mA  
V
F
I =100mA  
V
F
C
V =1.0V, f=1.0MHz  
pF  
ns  
T
R
t
I =I =10mA, I =1.0mA, R =100Ω  
rr  
5.0  
rr  
F
R
L
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2  
R2 (17-August 2009)  

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